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Li Xifeng; Zhang Qun; Miao Weina; Huang Li; Zhang Zhuangjian, E-mail: zhangqun@fudan.edu.cn2006
AbstractAbstract
[en] Transparent conductive oxide thin film of tungsten-doped In2O3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 x 10-4 Ω.cm was reproducibly obtained, with carrier mobility greater than 57 cm2 V-1 s-1 and carrier concentration of 4.0 x 1020 cm-3, as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222)
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Source
S0040-6090(06)00810-8; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
CHALCOGENIDES, COHERENT SCATTERING, CURRENTS, DIFFRACTION, ELECTRIC CURRENTS, ELECTRON TUBES, ELECTRONIC EQUIPMENT, ELEMENTS, EQUIPMENT, FILMS, INDIUM COMPOUNDS, MATERIALS, METALS, MICROWAVE EQUIPMENT, MICROWAVE TUBES, MOBILITY, OXIDES, OXYGEN COMPOUNDS, REFRACTORY METALS, SCATTERING, TRANSITION ELEMENTS
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