[en] Low temperature molecular beam epitaxy regrowths of Ga_1-xMn_xAs (x≅0.04) diluted magnetic semiconductors on GaAs/In_1-yGa_yP/GaAs(001) and In_1-yGa_yP/GaAs(001) (y≅0.51) heterostructures prepared by metal-organic chemical vapor deposition are described. The resulting Ga_1-xMn_xAs properties are comparable to epitaxial films grown directly on GaAs (001) substrates from in situ reflection high-energy electron diffraction, x-ray diffraction, magnetometry, and transport measurements with magnetic ordering temperature of as-grown films to range between ∼50 and ∼60 K. Postgrowth low temperature annealing enhances both magnetic and transport properties. Perfect etch selectivity between Ga_1-xMn_xAs/GaAs and In_1-yGa_yP is utilized to realize suspended Ga_1-xMn_xAs/GaAs doubly clamped beam micromechanical freestanding structures