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[en] The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed. (authors)
Journal
Nuclear Electronics and Detection Technology; ISSN 0258-0934; 
; v. 27(1); p. 150-153
; v. 27(1); p. 150-153