[en] Depending on kinetic and thermodynamic factors, numerous interesting structures can be created starting from epitaxially grown Si Ge:Si(001). In a regime of relatively low growth temperatures (about 550 degree C), a cooperative nucleation process takes place: pyramidal pits are formed preferentially, followed by the nucleation of {105} elongated islands, leading to Quantum Dot Molecules (QDMs), where the islands can interact electronically with each other. A thorough understanding of the formation of these structures requires knowledge of their strain and compositional fields. Recently, Grazing Incidence Anomalous X ray Diffraction (GIXRD) has been used to understand these issues. The purpose of the measurements taken on the XD1 beam line of the LNLS was to investigate compositional inhomogeneities in QDMs, which helped to elucidate their mechanisms of formation. (author)