[en] We report the results of time-resolved photoluminescence spectroscopy of a double layer quantum dot structure with large spacer distance emitting at 1.3 μm at room temperature. In ultrafast zero-time photoluminescence spectrum, we identified the transitions in GaAs barrier, in wetting layer and in quantum dots. Identical initial rise times give evidence of simultaneous filling of the quantum dot states. The excitation power dependence of photoluminescence dynamics reveals that the carrier dynamics are controlled by radiative recombination and cascade relaxation in quantum dot states. The overall picture of photoluminescence dynamics is in accord with a low concentration of nonradiative recombination channels in the studied structure which demonstrates its application potential. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)