[en] In this work we demonstrate that the defects that are created by 2-MeV Si ions can interact with dopant atoms both during implantation and during post-implant annealing. We show that the interstitials and vacancies created during MeV Si implantation result in a radiation enhanced diffusion of B and Sb markers, respectively, when the temperature of implantation is above the threshold temperature for formation of mobile dopant complexes. With the use of these dopant markers we also demonstrate that a vacancy-rich near surface region results during post-implant annealing of MeV implanted silicon. The depth distribution and the thermal evolution of clustered vacancies was measured by a Au labeling technique