[en] Ion induced electron emission (IIEE) from solid surfaces is one of the fundamental processes with ion beam applications. The different IIEE yields from different surfaces such as Si, SiO₂, metals and photoresist (PR) may cause charging and damage the gate oxide in ion implantation. IIEE yields with B⁺ and Si⁺ beams were measured for several kinds of PR materials, bare and oxide wafers. Although the target chamber pressure was always in or below the low 10^-7 Torr range, the IIEE yield from PR surfaces was found to be a function of implant dose with the most dramatic change in the beginning of implantation. For other materials such as Si and SiO2, the IIEE yield is independent of implant dose after the initial variation due to surface contamination