[en] We present a time- and temperature-resolved photoluminescence study of different carrier-phonon interactions in self-organized InAs/GaAs quantum dots (QD) under resonant excitation of the QD system. Resonant excitation leads to an enhancement of cross-sections of processes attributed to phonon interactions, like Raman scattering or hot-electron luminescence. Resonant PL techniques enable us to retrieve the energies of localized phonon modes. Time-resolved PL measurements allow us to differentiate between coherent and incoherent phonon-coupled processes. For the QD LO-phonon mode (34.6 meV), a very short radiative lifetime of under 30 ps is found, giving proof of the coherent character of the Raman scattering. In addition, temperature-dependent measurements are performed. Our results are compared with theoretical calculations.