[en] We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge₂Sb₂Te₅, Ge₈Sb₂Te₁₁, Ag-Ge₂Sb₂Te₅ and Ag-Ge₈Sb₂Te₁₁. Crystallization was caused by nano-pulse illumination (λ = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P · t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge₈Sb₂Te₁₁ film has a faster crystallization speed than the Ge₂Sb₂Te₅ film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge₂Sb₂Te₅ film but not in Ge₈Sb₂Te₁₁ film. To explain these results, we considered a heat confinement by electron hopping.