[en] The degradation of porous low-k materials, like SiOCH, under plasma processing continues to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure of the film to many species during plasma treatment, such as photons, ions, radicals, etc, it is difficult to identify the mechanisms responsible for plasma-induced damage. Using a vacuum beam apparatus with a calibrated Xe vacuum ultraviolet (VUV) lamp, we show that 147 nm VUV photons and molecular O₂ alone can damage these low-k materials. Using Fourier-transform infrared (FTIR) spectroscopy, we show that VUV/O₂ exposure causes a loss of methylated species, resulting in a hydrophilic, SiO_x-like layer that is susceptible to H₂O absorption, leading to an increased dielectric constant. The effect of VUV radiation on chemical modification of porous SiOCH films in the vacuum beam apparatus and in Ar and O₂ plasma exposure was found to be a significant contributor to dielectric damage. Measurements of dielectric constant change using a mercury probe are consistent with chemical modification inferred from FTIR analysis. Furthermore, the extent of chemical modification appears to be limited by the penetration depth of the VUV photons, which is dependent on wavelength of radiation. The creation of a SiO_x-like layer near the surface of the material, which grows deeper as more methyl is extracted, introduces a dynamic change of VUV absorption throughout the material over time. As a result, the rate of methyl loss is continuously changing during the exposure. We present a model that attempts to capture this dynamic behaviour and compare the model predictions to experimental data through a fitting parameter that represents the effective photo-induced methyl removal. While this model accurately simulates the methyl loss through VUV exposure by the Xe lamp and Ar plasma, the methyl loss from VUV photons in O₂ plasma are only accurately depicted at longer exposure times. We conclude that other species, such as oxygen radicals or ions, may play a major role in chemical modification at short times near the surface of the material, while VUV photons contribute to the majority of the damage in the bulk.