[en] We have investigated the microstructure and electrical properties of HfTaON high-k films deposited on n-type Si (1 0 0) substrate using a dual ion beam sputtering deposition technique (DIBSD). It is worth noting that HfO₂ begin to precipitate from four-compound HfTaON and crystallize as a monoclinic phase after annealing at 1100 °C. From FTIR spectra, one strong absorption peak at 512 cm^-1, which is characteristic of the HfO₂ monoclinic structure is also observed. The interfacial SiO_x can be formed during the annealing procedure rather than sputtering process, and the increase of atomic percentage of Si-O bands and transition from SiO_x (x < 2) to SiO₂ are observed with the increase of annealing temperature. High efficiency HfTaON film prepared by novel DIBSD has a higher dielectric constant of 24 and lower leakage current of 2.28 × 10^-8 A at V_g = (V_fb - 1), as compared with that of SiO₂·· HfSiON·· HfTaO films with same thickness.