[en] In our previous report (Takagaki et al 2011 Semicond. Sci. Technol. 26 085031), we have demonstrated that the Bi atoms in Bi₂Se₃ are substituted by the substrate atoms when its growth is attempted on the surface of transition metals using the hot-wall-epitaxy method. Here, we show that the substitution takes place similarly when Bi₂Te₃ and Sb₂Te₃ are employed as the source materials. For Ag, Cu and Ta substrates, Bi and Sb atoms are replaced completely, whereas the replacement is partial for Ni. Au induces no substitution and, on the contrary, helps to form Bi₂Te₃ and Sb₂Te₃ crystals at high temperatures. The lowering of the melting point of the substrate metals by inclusion of source elements causes some dependences of the growth outcome on the source materials. We also perform optical characterizations of the silver, copper and nickel tellurides synthesized by the substitution. (paper)