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[en] The robust development of exotic devices strongly relies on physical characterization to better understand the stacked layers architecture and the resulting morphology. In such a context, a silicon nanowire, 200nm long and of around 15nm of diameter, encapsulated by a high-k metal gate stack (TiN/HfSiON) of few nanometers per layer, is characterized by 2D and 3D X-ray energy dispersive spectroscopy in a STEM to evaluate the process flow methodology
Journal
Journal of Physics. Conference Series (Online); ISSN 1742-6596; 
; v. 471(1); [4 p.]
; v. 471(1); [4 p.]