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[en] We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately −20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature
Journal
Journal of Instrumentation; ISSN 1748-0221; 
; v. 10(12); p. P12007
; v. 10(12); p. P12007