[en] An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO_2 on the TiO_2−V_2O_5−Y_2O_3 varistor ceramics. The result shows that as the doping contents of V_2O_5 and Y_2O_3 are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO_2 makes the highest α value (α = 12.8), the lowest breakdown voltage V_1_m_A (V_1_m_A = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO_2−V_2O_5−Y_2O_3 varistor ceramics undoped with Ge and GeO_2 and mono-doped with Ge or GeO_2. The TiO_2−V_2O_5−Y_2O_3−Ge−GeO_2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties. (paper)