[en] La_2_/_3Ba_1_/_3MnO_3: wt%Ag_x (LBMO:Ag_x, x=0.04) films were prepared on single crystalline (001)-orientated LaAlO_3 substrates by pulsed laser deposition technique. All the samples show along the (00l) orientation in rhombohedral structure with R3c space group. The surface roughness (Ra), insulator-metal transition temperature (Tp) and resistivity at Tp (ρ_T_p) of the LBMO:Ag_0_._0_4 films reached optimal values of 3.29 nm, 288 K and 0.033 Ω cm at 740 °C, respectively. The improvement of electrical transport properties in the films are attributed to the optimal growth temperature and Ag-doping improve the microstructure of the surfaces, grain boundaries (GBs) in connectivity and better crystallization. In addition, the electrical conduction behaviors can be well fitted with the grain/domain boundary, electron–electron and magnon scattering mechanisms in the ferromagnetic metallic region (T< Tp), as well as with the adiabatic small polaron hopping mechanism in the paramagnetic insulating region (T>Tp).