[en] 

Abstract—

Scanning electron microscopy results demonstrate that coupling of the ferromagnetic and ferroelectric components in a Co/PbZr_0.45Ti_0.55O₃/Co thin-film structure, resulting in a considerable magnitude (several to tens of mV/A) of a low-frequency magnetoelectric effect at room temperature, extends to a depth of up to 20 μm. This makes it possible to optimize the thickness of the PbZr_0.45Ti_0.55O₃ substrate and enhance the performance of such structures for use as sensing elements in information storage/processing devices and magnetic field sensors based on the magnetoelectric effect.