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Kotlyar, K. P.; Soshnikov, I. P.; Morozov, I. A.; Berezovskaya, T. N.; Kryzhanovskaya, N. V.; Kudryashov, D. A.; Lysak, V. V., E-mail: konstantin21kt@gmail.com2018
AbstractAbstract
[en] InGaN/GaN nanorod structure is presented for the fabrication of light-emitting diodes by means of plasma-chemical etching. Processes of the etching of nanorods and the defect passivation in a planar InGaN/GaN quantum dot heterostructure are studied. The obtained results allow creating the light-emitting diode nanostructure with a greater efficiency compared to the classical planar technology.
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Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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