Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.024 seconds
[en] In the present work the linewidth H(x) variations of the ESR signals of conduction electrons have been investigated with a successive layer removal of the ion-implanted silicon. Doping impuity implantations have been carried out at both room and high temperature followed by annealing at 700 to 11500C. The relationship of the observed H(x) dependence to the distribution of lattice imperfections has been found and defect profiles calculated. The lattice imperfection distributions have one or two maxima dependent upon irradiation conditions. The first maximum is near the projected range of the doping impurity ions and the second one is at the surface. The analysis of results obtained shows that the first maximum is related to defects which involve non-substitutional phosphorus atoms; the surface layer is thought to arise from interstitial defects. (author)
Source
Carter, G.; Colligon, J.S.; Grant, W.A; Institute of Physics Conference Series; No. 28; p. 18-23; ISBN 0854981187; 
; 1976; Institute of Physics; London; International conference on applications of ion beams to materials; Warwick, UK; 8 Sep 1975
; 1976; Institute of Physics; London; International conference on applications of ion beams to materials; Warwick, UK; 8 Sep 1975