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[en] The physical processes are considered which lead to amorphization of single-crystal semiconductors during ion bombardment. A general review of experimental facts and ideas concerning processes of mono-crystal structure recovery during irradiation (the radiation annealing, the athermal stimulated crystallization of amorphized layer during bombardment of semiconductors with doping impurity ions) is carried out. (author)
Source
Urli, N.B.; Corbett, J.W.; Institute of Physics, London (UK); Institute of Physics Conference Series; no. 31; p. 164-173; ISBN 0 85498 121 7; 
; 1976; p. 164-173; Institute of Physics; Bristol; International conference on radiation effects in semiconductors; Dubrovnik, Yugoslavia; 6 - 9 Sep 1976; ISSN 0305-2346;
; 1976; p. 164-173; Institute of Physics; Bristol; International conference on radiation effects in semiconductors; Dubrovnik, Yugoslavia; 6 - 9 Sep 1976; ISSN 0305-2346;