[en] The 3C-SiC layers grown on the 15R-SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown that the obtained layers are of a rather high structural quality. By the data of the Raman spectroscopy and capacitance-voltage measurements, it is established that the electron concentration in the 3C-SiC layer is (4-6) x 10¹⁸ cm^-3.

[en] Highly doped p-3C–SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ∼E_V + 0.25 eV and at E_V + 0.06–0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C–SiC devices

[en] 3C-SiC epitaxial layers with a thickness of up to 100 μm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm² and uncompensated donor concentration N_d - N_a ∼ (10¹⁷-10¹⁸) cm^-3 were produced at maximum growth rates of up to 200 μm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ∼ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices

[en] Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C–V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p–i–n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p–i–n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers