[en] Diamond sensors are studied as an alternative to silicon sensors to withstand the high radiation doses that are expected in future upgrades of the pixel detectors for the SLHC. Diamond pixel sensors are intrinsically radiation hard and are considered as a possible solution for the innermost tracker layers close to the interaction point where current silicon sensors cannot cope with the harsh radiation environment.An effort to study possible candidates for the upgrades is undergoing using the Fermilab test-beam facility (FTBF), where diamonds and 3D silicon sensors have been studied. Using a CMS pixel-based telescope built and installed at the FTBF, we are studying charge collection efficiencies for un-irradiated and irradiated devices bump-bonded to the CMS PSI46 pixel readout chip. A description of the test-beam effort and preliminary results on diamond sensors will be presented

[en] The CMS silicon pixel detector is the tracking device closest to the LHC p–p collisions, which precisely reconstructs the charged particle trajectories. The planar technology used in the current innermost layer of the pixel detector will reach the design limit for radiation hardness at the end of Phase I upgrade and will need to be replaced before the Phase II upgrade in 2020. Due to its unprecedented performance in harsh radiation environments, 3D silicon technology is under consideration as a possible replacement of planar technology for the High Luminosity-LHC or HL-LHC. 3D silicon detectors are fabricated by the Deep Reactive-Ion-Etching (DRIE) technique which allows p- and n-type electrodes to be processed through the silicon substrate as opposed to being implanted through the silicon surface. The 3D CMS pixel devices presented in this paper were processed at FBK. They were bump bonded to the current CMS pixel readout chip, tested in the laboratory, and testbeams carried out at FNAL with the proton beam of 120 GeV/c. In this paper we present the laboratory and beam test results for the irradiated 3D CMS pixel devices. -- Highlights: •Pre-irradiation and post-irradiation electrical properties of 3D sensors and 3D diodes from various FBK production batches were measured and analyzed. •I–T measurements of gamma irradiated diodes were analyzed to understand leakage current generation mechanism in 3D diodes. •Laboratory measurements: signal to noise ratio and charge collection efficiency of 3D sensors before and after irradiation. •Testbeam measurements: pre- and post-irradiation pixel cell efficiency and position resolution of 3D sensors