[en] SSC-LINAC control system is based on EPICS architecture. The sub control system of digital power supplies is a kind of IOC send and receive custom command via Ethernet and TCP/IP protocol. The old IOC is designed to use period scan mode IOC, and there are so many digital power supplies, that we can't make sure every connect condition of digital power supply is fine. IOC must wait a long time if one of them can't connect correctly and other digital power supply's PV may also be blocked. An IOC that uses interrupt driven mode to avoid the shortcoming was designed. This will be described in this paper. (author)

[en] On ion implanters, dosimetry is generally controlled by monitoring an electrical current detected with Faraday cup(s) instead of the actual number of dopants. In some cases, ions in a beam undergo charge exchange phenomenon, interacting with residual gas molecules in a beamline. This charge exchange of ions causes variations of the detected beam currents which result in inaccurate dosimetry of implanted dopants. We will introduce to you a system similar to Pressure Compensation of the batch-type ion implanters to single-wafer ion implanters, that is, the SHX high current ion implanter and the MC3-II medium current ion implanter. The system converts the beam current detected with Faraday cups to an adequate value for dose control as a function of beamline pressure and brings accurate dosimetry also in these single-wafer ion implanters.

[en] The MC3-II/WR is a medium-current ion implanter, newly developed by SEN Corporation. The most significant change from the original MC3-II is an expansion of its energy coverage with an extended terminal voltage from 260 kV to 320 kV. This expansion takes in a large portion of high energy applications and results in significant cost reduction of device production. The MC3-II system was developed to meet requirements of advanced LSI's, especially requirements for implant accuracy through its controllability of beam quality, keeping productivity high or. The MC3-II/WR inherits the MC3-II's advantages and enhances its capability in the energy region and mechanical throughput.

[en] The SHX-III system, categorized as a single-wafer high-current ion implanter, has been developed by SEN Corporation in order to meet all the requirements for high dose and relatively high mid-dose applications, including high-tilted multi-step implantation. Recently the three major advanced device types, namely logic devices, memory and imagers, started to require high-current ion implanters in diverse ways. The SHX-III is designed to fulfill such a variety of requirements in one system. The SHX-III has the same end station as the MC3-II/WR, SEN's latest medium current implanter, which has a mechanical throughput of 450 WPH. This capability and precise dose control system of the SHX-III causes dramatic productivity enhancement for application of mid-high dose, ranged between 5E13 to 2E14 atoms/cm2, usually performed by medium current ion implanters. In this paper the concept and performance of the SHX-III will be described, concerning influence of device characteristics. A concept and performance data of the SHX figure that this system can provide implant quality and productivity as far as the 32 nm node.

[en] Control system of HIRFL-CSR accelerator is now upgrading to new architecture based on Experimental Physics and Industrial Control System (EPICS), a control sub-system of High Voltage (HV) for slow extraction on CSRm must be redesigned with the new architecture. The hardware of the new system based on a high-performance FPGA controller. Researched on embedded EPICS technology and implemented core function of the sub-system based on the technology. This paper describes the design and implementation of the new control system. (paper)

[en] Precise implant angle control is required for the latest generation of ion implanters to meet further shrink semiconductor device requirements. Especially, the highest angle accuracy is required for Halo implant process of Logic devices. The Halo implant angle affects the device performance, because slight differences of beam divergence change the overlap profile towards the extension. Additionally, twist angle accuracy is demanded in case of channeling angle implant. Therefore monitoring beam angles and wafer twist angles is important. A new monitoring system for the MC3-II, SEN Corp.'s single wafer type medium current implanter has been developed. This paper describes the angle control performance and monitoring system of the MC3-II. For the twist angle control, we developed a wafer notch angle monitor. The system monitors the wafer notch image on the platen. And the notch angle variation is calculated by using image processing method. It is also able to adjust the notch angle according to the angle error. For the tilt angle control, we developed a vertical beam profile monitor. The monitor system can detect beam profile of vertical directions with horizontally scanning beam. It also measures beam angles of a tilt direction to a wafer. The system configuration and sample beam data are presented.

[en] The newly built SECRAL II (Superconducting Electron Cyclotron Resonance ion source with Advanced design in Lanzhou II) is a multi-purpose intense highly charged ion source and is of great significance at Institute of Modern Physics (IMP). The control system is an important subsystem of SECRAL II. In this paper, we implement a control system for SECRAL II. In order to achieve high quality control, we have presented and followed some useful control concepts. The control system can perform control and monitor of all devices. Besides, it can also complete data store, alarms, interlocks and human safety. In all, the control system effectively supports the operation for SECRAL II. The control system was completed and put into operation in June 2016. The control system has successfully worked for about 11000 hours. During this process, the hardware works normally and without trouble. The control software has a low failure rate (5.5×10-4/hour) and its MTTR (Mean Time to Repair) is less than 30 minutes. Since then, SECRAL II has set many world records in the field of ECR ion source. (paper)

[en] Since geometries of semi-conductor devices continue to shrink, the requirement for each process becomes severer to keep uniformity of electrical parameters of the semi-conductor devices. A larger wafer also causes larger variations. Thus it has been strongly required for ion implantation process to compensate for the variations from other processes because of its good dose controllability. A newly developed mapping of intentional non-uniform dosage system, which is named 'MIND system', is implemented in SEN's single-wafer-type implanters. The MIND system controls both horizontal and vertical scan speed simultaneously. Intentional two-dimensional non-uniform profiles of sheet resistance, such as concentric and eccentric profiles, are obtained only by single-step ion implantation.

[en] The control system upgrade of the 320 kV heavy ion multidisciplinary research facility was studied in this paper. The upgraded control system was based on distributed system model. Serial port server, programmable logic controller (PLC) and servo motors were used to control and monitor all devices remotely. By building up EPICS IOC dynamic database, all controlled devices were integrated together seamlessly. As to operator interface, control system studio (CSS) toolkit was adopted to access all controlled devices transparently. This upgraded control system has been running for more than 10000 h. At present, the control system runs steadily and reliably, which fully meets the requirements of 320 kV heavy ion multidisciplinary research facility and physical experiment. (authors)

[en] An integrated monitoring system of power supply in the CSRm is designed to reconstruct the original monitoring system. The system is based on the LabVIEW software platform and uses the PXI-6133 multi-function data acquisition card of NI. The C/S mode is adopted to build the system. The programs in the front -end servers acquire data from the power supply and process the data. The processed data will be transmitted to the client with the DataSocket Transmit Protocol. The programs in the client can set the parameters of the power supplies and receive, display the data. According to the test results, the system is a stable and reliable system with a simple, flexible and manageable operation interface and it has fulfilled the requirements of controlling beam of CSRm. (authors)