[en] Results of investigations into the behaviour of point defects in silicon, germanium and Si(Ge)-base semiconductor systems are described. The investigations have been performed with a high-voltage electron microscope at accelerating voltage 0.25 to 1.0 MV, irradiation intensity I=1x10¹⁸ to 5x10¹⁹ cm^-1s^-1. The temperature of samples during irradiation varied from - 100 to 800 deg C. Mutual annihilation of interstitial atoms and vacancies is shown to be the main process determining stationary concentrations of point defects. The formation of interstitial atom clusters is related to prevailing displacement of vacancies onto the Ge and Si crystals interface with a film of natural or thermal oxides. A stronger temperature dependence, of vacancy mobility, as compared with interstitials, specifies the effect of electron low- temperature annealing of rod-like defects (RD) and (113)-defects in free surface samples. In the absence of the competing process of RD and (113) - defect formation, the conditions of the effective interaction of interstitial atoms with dislocations are found which to ''crawl over'' of dislocations. Reduction in dimensions of dislocation dipoles and loops of inculcated type at high-temperature annealing is shown to accur at the expense of interstitial atoms generation by the above defects

[en] The interaction between dislocations and point defects in Ge and Si is investigated. Point defects were generated by 1 MeV electron beam in the electron microscope in situ. The introduction of dislocations into irradiated crystals was realized by means of plastic deformation. Temperature dependence of dislocation creep rate, the growth of partial dislocation loops during crystal irradiation are presented

[en] Irradiation of Si single crystal foils with electrons in a high voltage electron microscope (HVEM) at elevated temperatures is known to result in the formation of interstitial-type rod-like defects (RLD) along [100] and platelets with a habit plane [113]. To determine surface effects on RLD formation, space defect distribution in crystals with different impurity content was studied. Diagrams of RLD distribution show RLD to be concentrated mainly near the surface (approximately 0.5 μm deep), with the middle region of the foil being practically free of defects. (Auth.)

[en] Formation of rod-like defects in Si has been investigated by means of a high-voltage electron microscope. Predominant appearance and accelerated growth of defects near the crystal surfaces have been discovered. It is shown that the separation of components of vacancy-interstitial pairs results from the predominant sink onto the real surface of vacancies. Enrichment of Si layer near the surface with interstitial atoms on oxidation has been established

[en] Irradiation of silicon containing perfect dislocations and Frank loops is carried out 'in situ' in an electron microscope at 200 keV and T = 20 to 1000 ⁰C. The formation of aggregates of interstitial atoms as rod-like and (113)-defects is established at T = 20 to 600 ⁰C. Irradiation does not result in dislocation climb in this temperature range. Transformation of perfect dislocations to helical configurations and growth of Frank loops are observed at T >approximately 600 ⁰C. The dependence of the climb rate of the loop segments on the temperature, the irradiation intensity, the depth of the dislocation segment, and the thickness of irradiated crystal is measured. The data on the climb rate of the dislocation segments in the vicinity of silicon surface in comparison with the Si-SiO₂ interface are discussed. (author)

[en] Based on the experiments on irradiation in a high-voltage electron microscope the process of interstitial atom cluster formation is Si crystals with high B and P atom concentration is investigated. A strong dependence of the given process on the impurity type and conditions for point defect escape to the surface is demonstrated. On this base the mechanisms of point defect interaction with impurity atoms are discussed

[en] The formation of radiation defects (RD) in germanium irradiated in a high-voltage electron microscope (HVEM) by 1 MeV electrons was studied. The Ge (100) and Ge (111) crystals, both dislocation free and with dislocations induced by plastic deformation, were irradiated in the temperature range 20 to 700⁰C. The irradiation of specimens at 100 to 200⁰C resulted in the generation of elongated dislocation loops with complex contrast and also small defects of the dislocation loop type located near the dislocation lines. At 250 to 500⁰C in the Ge bulk, rod-like defects (RLD) are formed in the <110> direction with the displacement vector along <100>. The growth of RLD with increasing dose results in the formation of two-dimensional defects in brace 311 brace. Screw dislocations, at 500⁰C, become helicoids. At temperatures of more than 500⁰C the RLD generation is slowed down. At 600 to 700⁰C no defects are seen in HVEM. The character of interaction of RD with dislocations changes if irradiation is followed by a 700⁰C annealing. Further irradiation at 250⁰C turns all the dislocations into helicoids. The character of radiation defect interactions with dislocations is apparently determined by the structure of a dislocation core. (author)

[en] A qualitative model of i-type dislocation loop occurrence under high-temperature ion implantation of silicon crystals is proposed. The given model agrees well with experimental results, obtained from the dependence of dislocation loop formation on the ion mass and radiation temperature. The structure of silicon crystals implanted by H₂⁺ ions and light He⁺,B⁺,N⁺ ions as well as by ions with large mass (Ar⁺,Ga⁺,Xe⁺,Bi⁺), produced in earlier performed works is considered

[en] The formation mechanism of insulating titanium oxynitride nanolayers was studied by means of spectroscopic ellipsometry. The parameters of the model for solving the inverse problem of ellipsometry were chosen on the basis of experimental data obtained with the help of high-resolution transmission electron microscopy, atomic force microscopy, UV and X-ray photoemission spectroscopy. The layers were obtained using the plasmachemical nitridation of thin titanium layers on silicon substrate. The features of nanolayer preparation procedure (low temperature and short process time), as well as good masking characteristics (the minimal density of pores and defects, and the perfect smoothness of the surface) allow one to use these layers for chemical and electron passivation and stabilization of the surface of semiconductor nano-objects (quantum dots, quantum wires, nanowhiskers etc.) for electron and photon nanodevices.

[en] The oxidation-induced stacking faults and (113)-defects in the vicinity of the Si crystal surface have been studied using electron beam induced current (EBIC) mode of a scanning electron microscope. The difference for the electrical activity of these defects is supposed to be due to the difference for the atomic structure of the interstitial clusters