[en] The InSe-SnSe system was studied by DTA, microstructural, and x-ray analysis, and by determining electrophysical properties. The regions of solid solutions based on InSe or SnSe extend to approximately 25 mole%. The solid solutions are semiconductors with specific properties. The lattice parameters of the solid solutions based on InSe vary according to Wegard's law, but solid solutions based on SnSe exhibit deviations. In₂SnSe₃ (a=5.56 A, NaCl-type structure) and InSnSe₃ are formed and interact to give a eutectic at 540⁰ and approximately mole% InSe

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[en] Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(α)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 μm thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found

[en] By the methods of physicochemical analysis the SnTe - InSe and SnTe -Tl₂Se systems are investigated, their phase diagrams are plotted. In the systems SnInSeTe and SnTl₂SeTe compounds and narrow regions of solid solutions on the base of initial compounds are formed

[en] It is shown by physico-chemical methods that the InSe-SnSe and GaSe-SnSe system phase diagrams are eutectic-type, quasi-binary and contain vast regions of solid solutions based upon the initial compounds. The lattice parameters of InSe-based solutions decrease according to the Vegard law, and the parameters of SnSe-based solutions deviate from the law. The lattice parameters of solutions in the GaSe-SnSe system little depend on composition. The thermal width of the forbidden band of the solutions studied is proportional to their composition

No abstract available

[en] The diagrams of states of BiTe-In(Ga,Sn)Te systems are investigated by the methods of physical-chemical analysis (differential thermal,roentgen phase, microstructural methods). It is established that these diagrams are of a eutectic type with large areas of solid solutions. The alloys in these systems are semiconductors with specific properties

[en] Methods of physico-chemical analysis have been applied to investigate the Cu₂GeSe₃-CdSe system, its phase diagram is plotted. The Cu₂CdGeSe₄ compound decomposing in the peritectic reaction at 840+-5 deg C forms in the system. The homogeneity range on the part of Cu₂GeSe₃ is 12 mol. % CdSe, on the part of CdSe-7 mol.% Cu₂GeSe₃