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[en] NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO₂ devices. All high-k devices showed lower mobility compared with SiO₂ reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

[en] We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

[en] The accuracy of the radiotherapy treatment depends mainly on immobilization of patients during treatment. Commercially available immobilisation materials like plaster of paris, acrylic and thermoplastics are being used for immobilisation at our centre. Patients treated with above said materials developed increased skin reactions. Our objective is to determine the effect of incidence dose on the skin and skin sparing effect of megavoltage beam, while using the above materials as immobilization

[en] The aim of this presentation is to summarise and update the report 'Rare Earths (RE) and Energy Critical Elements (ECE): A Roadmap and Strategy for India' released in July 2012. The background to the report is as follows. The Ministry of Mines (MoM), Government of India constituted a steering committee in August 2011 to develop a strategy paper on status and availability of Rare Earth Elements (REE) and Energy Critical Elements (ECE). The race to find alternatives to RE by the use of supercomputers and genetic algorithms will be described. Many of the ECE eg. gallium, germanium, indium, selenium and tellurium are by-products of main metals: aluminium, copper, zinc and tin. Their production is restricted by that of main metals. Saline brine and subsoil bitterns are sources of lithium. Uranium, and niobium alloying with zirconium are critical to nuclear energy. Exploration, applications, recycling and recovery of these elements will be discussed. Our report and presentation lay stress on novel routes that emphasise self-reliance and not merely economic viability and also provide short, medium and long term options along with proposals for specific policy and legislative interventions

[en] To assess the performance evaluation of Microselectron HDR machine the standard quality control and quality assurance checks were carried out after each loading of new ¹⁹²Ir brachytherapy source In the machine. Total 9 loadings were done over a period of 30 months

[en] The aim of this study is to evaluate and analyze the on position leakage in-patient plane and radiation safety compliance of telegamma unit over the period of 36-months. RMM (Roentgen per minute at 1 meter) measurements and leakage radiation measurements in-patient plane are the part of the Quality assurance programme. Both measurements were repeated at regular intervals. These recorded values have been taken up to assess the shielding adequacy of source housing of telecobalt unit over the period of years. Measured values at 69.0 cm and 156.0 cm from the beam axis 8 points located in-patient plane ranges from 0.027% to 0.081% and 0.0045% to 0.0062% respectively, which were well below the specified tolerance limit of 0.1% RMM

[en] Cancer incidence in India is steadily increasing. While planning radiation installation, it is important to ensure the radiation safety of Radiation worker and general public. Structural shielding thickness of primary, secondary barriers for a 15 MV medical linear accelerator (Linac) are calculated as reported in the National Council on Radiation Protection (NCRP) Report No. 151, Atomic Energy Regulatory Board (AERB) Safety code and International Atomic Energy Agency (IAEA) SRS No.47. From this study, the layout plan has adequate shielding thickness to ensure radiation safety of staff and public. The dose levels in and around the Linac bunker is well within the dose limit recommended by competent authority. It is safe to install a High Energy Accelerator in the premises

[en] We examine various microfluidic channel designs for sample delivery to silicon nano-wire biosensors pertaining to the modeling and simulation. Nano-wires with its high sensitivity permits label free detection of bio-molecules. Without careful considerations to its fluidic delivery network, effects of detection can be limited. Different micro-channel designs of relatively larger width aid in fluid release and sensors are placed strategically to attain high efficiency in bio-sample delivery. One design establishes the viability of hydrodynamic focusing through splitting a single flow into two and permits focusing of bio-samples at the flow recombination region. It avoids the delicated fluidic delivery systems generally used in hydrodynamic focusing. A focusing effect of 71.3% based on the movement of a massless particle in the fluid is achieved using a straight channel design with a partition wall inside. Moreover, sample is focused in low velocity region which maintains minimal impact to nanowire sensor. This provides a simple and efficient delivery system for the nano-wire sensor upon integration

[en] We report a low-temperature (350 deg. C) anodic bonding followed by grind/etch-back method for a 200 mm wafer-scale epitaxial transfer of ultrathin (1.9 kA) single crystalline Si on Pyrex glass. Standard back-end-of-line 3 kA SiN/3 kA undoped silicon glass passivating films were used as the buffer layers between the silicon-on-insulator wafer and the glass wafer. The quality and strain-free state of the transferred transparent Si film to glass was characterized by cross-sectional transmission electron microscopy, x-ray diffraction (XRD), and high-resolution XRD. Complete removal of the bulk Si after bonding was ascertained by Auger electron spectroscopy spectra and depth profiling. Strong adhesion between the transferred film and the glass wafer was verified by standard tape adhesion tests. This process will pave the way for future generations of Si-based microelectronics including bioelectronics