[en] We critically discuss the possibility of using diamond films, grown with the Chemical Vapour Deposition (CVD) technique, as imaging detector in the extreme UV energy range. We present results on electrical tests and on irradiation studies, under UV source, of CVD films, bought from market. We show that the behaviour of the film under irradiation in the energy interval of 190-350 nm would prevent its use as imaging detector, if special measures on the deposition qualities are not taken. We discuss the mechanisms of the behaviour under irradiation, in terms of the crystal defects. We have extensively studied the charge-up effect of the film and the influence on the detection efficiency. We find a dependence on the irradiation time and methods. We can address the explanation of the behaviour in terms of the decay time of the traps. This leads to an important conclusion on the homogeneity and on the defect sites. We claim that this effect depends on the defect types and it is rarely reproducible

[en] We present the results of UV irradiation of samples of CVD diamonds films in terms of time response and current-voltage curves. In this paper we describe the samples and the studied method. This brings us to conclusions on the defect sites. We have extensively studied the charge up effect of the film and the influence on the detection efficiency. We find a dependence on the irradiation time and methods, which questions directly a photon detector based on synthetic diamond films

[en] Responsivity measurements have been performed on commercial silicon photodetectors in the UV range 200-400 nm. The microstrip and pixel detectors have been reverse biased in fully depleted condition (more than 25 V reverse bias) and in partially depleted condition (5 V reverse bias). We have also performed measurements in back illumination geometry, of particular interest in most industrial applications. Promising results obtained with commercial photodetectors in the UV range in terms of photocurrent stability and sensitivity open a variety of applications

[en] We have studied GaAs pixel detectors on semi-insulating wafers with Schottky contacts. We performed comprehensive measurements on the inter-pixel and capacitance to back plane. Being semi-insulating, the behaviour is totally different with respect to other common semiconductors, such as high resistivity silicon. Non-homogeneities are also an issue, due to both the contacts and the crystal bulk. In order to detect them and their influence on capacitance, we undertook systematic measurements with different configurations of the measuring electrodes