[en] Short note

[en] Short note

[en] The interaction of a pulsed ion beam with a solid leads to a small temperature variation in the near subsurface region. Due to the local heating of the target thermal elastic waves were generated. The measurement of these waves gives information about the internal structure and properties of the sample. Experiments were carried out using an intensity modulated beam of high energy ions from a TANDETRON accelerator for the investigation of elastic waves in aluminum, steel, copper and silicon samples as well as for a pulsed low energy focused ion beam (FIB) for acoustic imaging from structures on different targets. The detection of the acoustic signal was provided by piezoelectric transducers based on lead zirconium titanium (PZT) ceramic or on polyvinylidene fluoride (PVDF) films which can be applied in the scanning ion acoustic microscopy. In this case the modulation frequency was varied in the range from 60 kHz to 2 MHz. A lateral resolution of the ion acoustic images near the samples surface of a few micrometers could be obtained

[en] Short note

[en] This paper reports on an extensive study of the characteristics of AuGeSi and CoNd liquid metal alloy ion sources (Focused Ion Beams From Liquid Metal Ion Sources, Research Studies Press, Taunton, Somerset, UK, 1991). Such characteristics include current-voltage curves and ion beam mass spectra. A careful investigation has been undertaken where the emitter temperature is the main variable experimental parameter. Theoretical models, or theoretical attempts in certain cases, tend to support the experimental results. The experimental results, in conjunction with existing theories, suggest that simply for reasons of self-consistency two mechanisms must be operative for the production of doubly-charged ions from the AuGeSi source: direct field-evaporation and post-ionisation

[en] Short note

[en] The end of the caption of figure 3 is corrected to '...ion beam. i 10μA.' The end of the caption of figure 4 is corrected to '...experimental points; curve, Gaussian fit.' On p L15 the last line on the page: [12] is corrected to [12a]. The end of the caption of figure 5 is corrected to '...figure 3. i = 10 μA.' On p L16, the third line from the top of the second paragraph on the left-hand side: 'distributions' is corrected to 'distribution'. The fourth line from the bottom of the second paragraph on p L16: [15, 16] is corrected to [15]. The last line before the References on p L16: [12] is corrected to [13]. In reference [10] the page number is corrected to 699. An extra reference is inserted in the Bibliography: [12a] Hesse E, Mair G L R, Bischoff L and Teichert J 1996 J. Phys. D: Appl. Phys. 29 2193. (author)

[en] Focused ion beams (FIBs) are of importance as direct write tools in the microelectronics industry, and beams containing Er ions are of importance for optoelectronics applications. Microstructures doped with Er are attractive because of their intra-4f transition of Er³⁺ at a wavelength of 1.54 μm, which corresponds to the minimum of attenuation of optical wave-guides. We describe the electric characteristics and mass spectra of two liquid metal alloy ion sources; namely Er₇₀Fe₂₂Cr₃Ni₅ and Er₆₉Ni₃₁. For the first time in the literature the energy spread of triply charged ions (Er ³⁺) is reported

[en] On the right-hand side of p L11 of the article, the units of brightness in the eleventh line from the top are corrected to A cm^-2 sr^-1. The caption of figure 1 is corrected to 'The energy distribution of the Ge⁺⁺ ion for a current of 3 μA and a source temperature of 485 deg. C: full square, experimental points; solid curve: Gaussian fit; y-direction, arbitrary units; x-direction, eV (scale shown in the figure).' On the left-hand side of p L12 of the article, the second and third lines from the top are corrected to 'Figure 1 shows the energy distribution of the Ge⁺⁺ ion, emitted....'. (author)

[en] In this work effects of radiation damage to the properties of Si-nuclear radiation detectors are investigated. Theoretical and experimental investigations were made concerning the influence especially of α-particles (5.5 MeV) and electrons (E/sub max/ = 2.27 MeV) to essential detector parameters, like minority carrier lifetime, energy resolution and counting efficiency of ion-implanted detectors from high resisitivity FZ- and NTD-Si. The medium damage constants are: K/sub tau/ (α) = 3.5 x 10^-6 cm²/s, K/sub tau/ (β) = 5 x 10^-9 cm²/s. If the oxide passivation layer is irradiated too the damage constants increase of one are two orders of magnitude. The decrease of lifetime at high does leads to a increasing of reverse current and electronic noise. The energy resolution for α-spectrometric measurements at doses of PHI/sub α/ >= 5 x 10¹⁰ cm^-2 and PHI/sub e/ >= 5 x 10¹³ cm^-2 respectively is determined by charge carrier loss on radiation induced defects. The maximum possible irradiation dose for spectrometric detectors amounts 2...5 x 10¹⁰ cm^-2 for α-particles and 5...50 x 10¹² cm^-2 for electrons. For counting detectors these values increase of one or two orders of magnitude. For radiation damaged detectors a partial or even a complete defect annealing is possible. (author)