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[en] A role of inelastic interaction in generation of complex radiation defects in silicon by protons irradiation was evaluated. It was shown that the contribution of inelastic channels into the total cross section are close to 40 % for defect formation with a threshold of 25-40 keV under 30 MeV proton influence. (author)
Journal
Doklady Ministerstva Nauki - Akademii Nauk Respubliki Kazakhstan; ISSN 1029-8665; 
; v. 6(3); p. 21-27
; v. 6(3); p. 21-27