[en] We critically discuss the possibility of using diamond films, grown with the Chemical Vapour Deposition (CVD) technique, as imaging detector in the extreme UV energy range. We present results on electrical tests and on irradiation studies, under UV source, of CVD films, bought from market. We show that the behaviour of the film under irradiation in the energy interval of 190-350 nm would prevent its use as imaging detector, if special measures on the deposition qualities are not taken. We discuss the mechanisms of the behaviour under irradiation, in terms of the crystal defects. We have extensively studied the charge-up effect of the film and the influence on the detection efficiency. We find a dependence on the irradiation time and methods. We can address the explanation of the behaviour in terms of the decay time of the traps. This leads to an important conclusion on the homogeneity and on the defect sites. We claim that this effect depends on the defect types and it is rarely reproducible

[en] We present a VLSI custom device, named KPIX, developed in a 0.6 μm CMOS technology. The circuit is dedicated to readout solid-state detectors covering large areas (on the order of square centimetre) and featuring very small currents. KPIX integrates 1024 channels (current amplifiers) and 8 ADCs on a 15.5x4 mm² area. Both an analogue and digital readout are allowed, with a 10 bit amplitude resolution. Amplifiers are organized in 8 columns of 128 rows. When choosing the digital or the analogue readout, the complete set of channels can be read out in about 30 ms. The specific design of the amplification cells allows to measure very small input current levels, on the order of fractions of pico-ampere. Power consumption has also been kept at the level of 80 μW per cell and 150 mW (peak value) in total. The specific chip architecture and geometry allow use of many KPIX circuits together in order to serve a large detector sensitive area. The KPIX structure is presented along with some measurements characterizing its performance

[en] The muon detector of the LHCb experiment at CERN plays a fundamental role in the first trigger level. It is mainly realized by means of a multi-wire proportional chambers technology and consists of about 126,000 front-end channels. High efficiency is necessary both at detector and front-end level to satisfy the trigger requirement of five hits per five muon stations with an overall efficiency of 95%. This corresponds to having a single front-end channel detection efficiency of 99% within a time window of 20 ns, and also poses the problem of an accurate time alignment of the whole detector. The problem is addressed by designing two custom integrated circuits, named DIagnostic, time Adjustment and LOGics (DIALOG) and SYNC. DIALOG integrates important tools for detector time alignment procedures and time alignment monitoring on the front-end system. Many other features, necessary for the muon trigger operation and for a safe front-end monitoring, are integrated on DIALOG

[en] When a beam of X-rays crosses an object, its spectrum is modified depending on both the density and effective atomic number of the material. We describe an integrated (VLSI) spectrometer used in a digital radiology system for performing spectral analysis of the detected X-rays. It integrates 16 independent channels and gives seven bits of energy resolution. This permits the distinction between tissues featuring small differences in effective atomic number, e.g. micro-calcifications and fat cysts, which have the same contrast in a normal radiography. The integrated circuit services a row of solid-state detectors that can travel along the specimen in the radiology system in perpendicular directions, so that bi-dimensional images can be recorded. The circuit performs pulse height analysis and stores the spectral distribution of the detected photons. The circuit is described and its performance analyzed

[en] We present the results of UV irradiation of samples of CVD diamonds films in terms of time response and current-voltage curves. In this paper we describe the samples and the studied method. This brings us to conclusions on the defect sites. We have extensively studied the charge up effect of the film and the influence on the detection efficiency. We find a dependence on the irradiation time and methods, which questions directly a photon detector based on synthetic diamond films

[en] Previous results on the performance under irradiation of a pixel detector matrix (Nucl. Instr. and Meth. A 487 (2002) 170) have been extended in order to test the readiness for commercial detector wafer production, using I-V, I-V under low-energy irradiation (UV responsivity) and C-V characterisation methods. The data analysis includes a study of the C-V characteristic interpolation. The conclusion points to the fact that state-of-the-art double-sided silicon pixel detector fabrication allows reliable industrialisation of low-energy imaging devices

[en] We present tests on the characterization of a custom-made high sensitive UV silicon detector with 16,512 pixels and 3.8 cmx2.8 cm active area. The structures were characterized for inter-pixel cross talk and dark current stability and responsivity at 260 nm of UV radiation

[en] We have studied GaAs pixel detectors on semi-insulating wafers with Schottky contacts. We performed comprehensive measurements on the inter-pixel and capacitance to back plane. Being semi-insulating, the behaviour is totally different with respect to other common semiconductors, such as high resistivity silicon. Non-homogeneities are also an issue, due to both the contacts and the crystal bulk. In order to detect them and their influence on capacitance, we undertook systematic measurements with different configurations of the measuring electrodes

[en] Responsivity measurements have been performed on commercial silicon photodetectors in the UV range 200-400 nm. The microstrip and pixel detectors have been reverse biased in fully depleted condition (more than 25 V reverse bias) and in partially depleted condition (5 V reverse bias). We have also performed measurements in back illumination geometry, of particular interest in most industrial applications. Promising results obtained with commercial photodetectors in the UV range in terms of photocurrent stability and sensitivity open a variety of applications

[en] We describe the dedicated circuits and the procedures implemented in the LHCb muon system aimed at an accurate time calibration of the detector channels. Time calibration is crucial for the correct operation of the hardware trigger level of the LHCb experiment