Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.038 seconds
Gardner, J.; Cerber, C.; Ke, Z.; Korjanevsky, S.; Leflat, A.; Lehner, F.; Lipton, R.; Lackey, J.; Merkin, M.; Rapidis, P.; Rykalin, V.; Shabalina, E.; Spiegel, L.; Stutte, L.; Webber, B.; Kansas U.; Kansas State U.; Illinois U., Chicago; Fermilab Moscow State U.; Zurich U.; NICADD, DeKalb
Fermi National Accelerator Lab., Batavia, IL (United States). Funding organisation: US Department of Energy (United States)2006
Fermi National Accelerator Lab., Batavia, IL (United States). Funding organisation: US Department of Energy (United States)2006
AbstractAbstract
[en] Several different spare modules of the D0 experiment Silicon Microstrip Tracker (SMT) have been irradiated at the Fermilab Booster Radiation Damage Facility (RDF). The total dose received was 2.1 MRads with a proton flux of ∼3 · 1011 p/cm2 sec. The irradiation was carried out in steps of 0.3 or 0.6 MRad, with several days between the steps to allow for annealing and measurements. The leakage currents and depletion voltages of the devices increased with dose, as expected from bulk radiation damage. The double sided, double metal devices showed worse degradation than the less complex detectors
Primary Subject
Source
1 Mar 2006; 17 p; AC02-76CH03000; Available from OSTI as DE00879081; PURL: https://www.osti.gov/servlets/purl/879081-0xwGtS/
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue