[en] The aim of this experiment is to grow a thin silicon layer (<50μm) by liquid phase epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 μm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)
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