No abstract available

No abstract available

[en] The redistribution of nitrogen atoms implanted in synthetic diamond crystals was investigated by secondary ion mass-spectrometry in course of an isothermal annealing program at 1400 deg. C during 1, 5 and 20 h. It was shown that the nitrogen profiles spread at a macroscopic scale, and the broadening is well described in terms of the diffusion movement of impurity atoms. The preliminary estimates of diffusion coefficients were obtained: 2.3x10^-15 cm²/s for 1 h annealing, 8.5x10^-16 cm²/s for 5 h annealing and 3.7x10^-16 cm²/s for 20 h annealing

[en] In this work we have found the temperature range in which the formation of oscillating distributions of impurity in heavily doped with boron and implanted with boron ions silicon took place. It has been suggested that the effect related to boron clustering processes being more efficient at the maximum of concentration of implanted impurity and at the borders of the region that was disturbed by ion irradiation

[en] The formation and some electrical properties of silicon-nickel silicide Schottky barriers formed by Ar⁺ ion implantation are reported. (100)-oriented n-type silicon was used as substrate. Nickel was deposited onto silicon substrate by electron gun evaporation. Ion implantation was carried out at room temperature with ion energy of 250 keV and with a fluence range of 1x10¹⁴ to 5x10¹⁵ ions cm^-2. The forward current-voltage characteristics were used to estimate the effect of ion implantation and thermal annealing on the Schottky barrier parameters

[en] An analysis of the kinetics of impurity redistribution between the parts of the quasi-periodic structure of boron distribution was carried out. The spatial structure was induced in a heavily boron-doped silicon after boron ion implantation and subsequent annealing at 900 deg C. It was found that upon heating from 900 deg C to 1075 deg C there was a clearly seen boron migration with a following capture of impurities in evenly spaced regions, the total amount of boron being conserved in the region where the boron redistribution had occurred