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AbstractAbstract
[en] The angular distributions of emission angle θ of helium (Z=2) produced in the collisions of incident particles of 1.88 A GeV 56Fe, 14.6 A GeV 28Si, and 60 and 200 A GeV 16O in nuclear emulsion is well expressed by dN=exp[a+χexp(γa-ηb)]d[exp(γa-ηb)] where the pseudorapidity is γ=-ln[tan(θ/2)] and the laboratory system primary rapidity is ηb. The consistency of the weighted mean value, χ=-0.052±0.002 for four data sets and the indentical shape of their frequency of occurrence distributions in terms of exp(γ-ηb) attest to the validity of the concept of limiting fragmentation for helium projectile fragments produced in the projectile fragmentation regions of heavy ion collisions in nuclear emulsion in the entire primary energy range 1.88-200 A GeV. (Author)
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Journal Article
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CHARGED PARTICLES, DISTRIBUTION, ENERGY RANGE, EVEN-EVEN NUCLEI, HELIUM IONS, HYPOTHESIS, INTERMEDIATE MASS NUCLEI, IONIZING RADIATIONS, IONS, IRON ISOTOPES, ISOTOPES, LIGHT NUCLEI, NUCLEAR FRAGMENTS, NUCLEAR REACTIONS, NUCLEI, OXYGEN ISOTOPES, PARTICLE PROPERTIES, RADIATIONS, SILICON ISOTOPES, STABLE ISOTOPES
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AbstractAbstract
[en] The photoinduced effects in PbZr00.30Ti0.70O3 (PZT) thin films have been investigated by applying combined measurements with atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), and piezoresponse force microscopy (PFM) imaging techniques. In this study, ferroelectric domains and photoinduced carrier distributions were measured before and after UV illumination and DC bias poling on the film's surface by using an UV light emitting diode (λ = 310 nm). By analysis of the histogram distributions of the phase signal of the out-of-plane ferroelectric polarization, we observed that the charges trapped on the sample's surface layer by the UV illumination affected the ferroelectric domain patterns, thus changing the orientation of out-of-plane domains. In addition, we observed that because of negatively trapped charges near the film surface, the surface potential shifted to a negative value after UV illumination.
Source
15 refs, 4 figs
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Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884; ; v. 59(31); p. 2579-2582
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Kim, K. H.; Cho, J. H.; Heo, S. R.; Lim, S. T.
Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)2010
Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)2010
AbstractAbstract
[en] Fabrication method of the transparent carbon nanotubes film on the glass with the transparency of 50 ∼ 80 % and the sheet resistance of 500 ∼ 2000 Ω/sq is developed based on the established study of the enhancement of the conductivity. Deformation of the bundle-type single-walled carbon nanotubes are analyzed with the variation of the energy transfer in the carbon nanotubes by the variation of the dose of the 10 MeV proton beam. Construction of the variation of the conductivity of the carbon nanotube network and the variation of the transparency of the glass are used for the feasibility of the fabrication of the transparent electrode using carbon nanotubes network. Transparent carbon nanotubes film are fabricated using spray method and the sheet resistance and transparency are controlled by the control of the quantity of the dispersion. Accumulated energy on the carbon nanotubes are controlled by the dose of the 10 MeV proton. Proton irradiation creates defects on the carbon nanotubes by particle collision and the recombination of the defects generates the decrease of the diameter of the carbon nanotubes. Ejection of the carbon from the carbon nanotubes generates not only the formation of the connection between carbon nanotubes but also between carbon nanotube bundles. These connections decrease the resistance between carbon nanotube networks and 2.5 times increase is measured. Although the electrical conductivity is increased by the proton irradiation, sulfuration of the glass is increased. Variation of the transparency is caused by the positive ion irradiation and the transparency is decreased with the dose due to the increase of the energy transfer on the glass
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Apr 2010; 31 p; Also available from KAERI; 6 refs, 12 figs, 1 tab
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Report
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AbstractAbstract
[en] Preferentially (111) oriented BiMnO3 thin film was deposited on (111) Pt/TiO2/SiO2/Si substrate. Nano-size bits of ferroelectric polarization on the BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate can be easily written and read by Kelvin Force Microscope (KFM). We found that, for the preferentially (111) oriented BiMnO3 thin film, only ferroelectric polarization has been induced at low writing biases, which makes the writing and reading process simple. This suggests that the preferentially oriented BiMnO3 thin film is a potential candidate for high-density data storage device based on KFM.
Source
16 refs, 4 figs
Record Type
Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884; ; v. 46(1); p. 33-36
Country of publication
CHALCOGENIDES, COHERENT SCATTERING, DEPOSITION, DIELECTRIC MATERIALS, DIFFRACTION, ELEMENTS, MATERIALS, MEMORY DEVICES, METALS, OXIDES, OXYGEN COMPOUNDS, PLATINUM METALS, SCATTERING, SEMIMETALS, SILICON COMPOUNDS, SURFACE COATING, TITANIUM COMPOUNDS, TRANSITION ELEMENT COMPOUNDS, TRANSITION ELEMENTS
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AbstractAbstract
[en] We report the structural properties of InGaZnO4 (IGZO) thin films prepared by using the sol-gel method. The structural properties of IGZO thin films were controlled by using the film thickness and thermal annealing temperature. In this study, the crystallization temperature of amorphous IGZO thin films was observed to be about 700 .deg. C. Also, we observed that the crystal size of IGZO thin films increased as the thickness and the annealing temperature were increased. In addition, we could observe that the atomic ratio of In, Ga and Zn of the IGZO thin film was slightly different from the molar ratio of a previous IGZO sol-gel solution (In:Ga:Zn = 1:1:1) post-annealed at 900 .deg. C because In and Zn are more volatile than Ga. The study of the crystallization of amorphous IGZO thin films provides an understanding of the growth mechanisms and thermal annealing effects for IGZO nanocrystals.
Source
22 refs, 4 figs, 2 tabs
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Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884; ; v. 60(2); p. 267-271
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AbstractAbstract
[en] Epitaxial ferroelectric thin films of SrBi2Ta2O9 (SBT) and PbZr0.53Ti0.47O3 (PZT) were deposited on epitaxial La0.5Sr0.5CoO3(LSCO)/(100) LaAlO3 substrate by pulsed laser deposition. The PZT thin film showed c-axis oriented epitaxial growth. On the SBT thin films, perpendicular arrangement of rectangular grains was observed with (00l) and relatively larger (220) X-ray diffraction peaks than other SBT peaks. Observed by kelvin probe force microscopy (KFM), when a high electric field is applied on a cantilever, a charge trap is a dominant effect than a ferroelectric polarization resulting from the increase of the surface charge trap due to high electric field and saturation of remanent polarization. By properly biasing low voltage, the polarization effect is larger than the surface charge trap effect and the sign of the surface potential is reversed indicating a dominant contribution from the ferroelectric polarization
Source
19 refs, 4 figs
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Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884; ; v. 42(Suppl.); p. 1121-1125
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AbstractAbstract
[en] Additions of dihydroxy-benzenes (such as catechol, hydeoquinione and resorcinol)as corrosion inhibitors decrease the corrosion of aluminium sheet (which is given in the market) in 0.1M-1.0M sodium hydroxide solutions. The decrease is dependent upon the concentration of the sodium hydroxide and that of the inhibitor. Inhibitive efficiency is resorcinol < catechol< hydroquinone< resorcinol+hydroquinone at a concentration of 0.005% (w/w) dihydroxy-benzenes, and catechol< hydroquinone< resorcinol< resorcinol+hydroquinone at 0.5%, whereas the efficiency of all three inhibitors reaches approximately 100% at a concentration of 2% inhibitors in 0.1M NaOH. No correlation appears to exist between the inhibitor efficiency and the dissociation constant (Pk values) of the inhibitor. It can be said that 0.5M concentration of sodium hydroxide is the fittest for reducing the aluminium sheet by hydroquinone and formation of catechol-aluminium complex ions in the sodium hydroxide solutions
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Source
10 refs, 4 figs
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Journal Article
Journal
Journal of the Corrosion Science Society of Korea; ISSN 0253-312X; ; v. 11(1); p. 3-7
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Lee, K. H.; Cho, D. H.; Won, J. O.; Cho, J. H.; Kim, J. Y.
Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)2008
Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)2008
AbstractAbstract
[en] The perovskite oxides La2CuO4 was prepared by auto-ignition method with citric acid as reductant and nitrate as oxidant at low temperatures. Single crystals of phase lanthanum copper oxide were implanted with 70-120 KeV argon and nitrogen ions at room temperature. The prepared materials have investigated the energy transition distribution and ion distribution for N2 and Ar ion-implantation depth. Also, this ionic ceramic of ion implanted with N+ and N2+ energy 70 keV, dose 5 x 1016 ions/cm2, and beam current density 8.91μm/cm2 were studied on physio-chemical and characteristic. We have studied on the effect of ion implantation for ionic ceramics materials surface modification for the first year. The ion beam treated ionic ceramics were investigated into its chemical structure and its characteristics as observed by XRD, SEM-EDS, BET and DTA. The oxygen gas sensors based on lanthanum copper oxide were fabricated by screen-printing method an YSZ substrate using the powder prepared by the ion implanted ionic state ceramics. The sensor's response was evaluated by periodic variation of oxygen partial pressure. Recently, the oxygen gas sensors using concentration cells consisting of oxygen-ion-conductor have been currently used as the oxygen gas sensors to measure oxygen concentration of exhaust gas. And, Resistive response behavior with varying oxygen gas concentration on lanthanum copper oxide have been studied. Oxygen sensor was measured in the temperature range of 400 .deg. C ∼700 .deg. C and different concentrations of oxygen. The results show that the resistance of oxygen sensor using YSZ-La2CuO4 decreases with an increase of temperature at given oxygen concentration, and it is good linearity. Also its sensor has faster response property at more than 500 .deg. C.
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Source
Apr 2008; 66 p; Also available from KAERI; 21 refs, 27 figs, 4 tabs
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Report
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AbstractAbstract
[en] In this paper, range measuring technique using 2 different sensor information sources-the thermal infrared image used for observation purpose and the real image of CCD-and the distance between the THV510 thermal infrared camera and the TM-7CN B/W CCD camera is described. The THV510 thermal infrared camera and the TM-7CN CCD camera are arranged in parallel with certain distance. The thermal infrared image at the left is used in extracting feature of the observing object with abnormal thermal characteristics, while the CCD image at the right is used in featuring object with the same thermal characteristics. In this way, the disparity between the 2 images at the left and right is calculated. The range is calculated by trigonometry by using the disparity value and the physical distance between the THV510 and the TM-7CN. It shows that this calculation have little error in comparison with the distance measurement method using the parallel stereo camera with same 25mm/f1.8 lens. The model of the thermal infrared camera used for this study is THV510 made by AGEMA, and its horizontal and vertical FOV is 18.3 .deg. X 9.15 .deg.. The CCD camera is PulNIX TM 7CN having the structure of the 1/ 2CCD camera
Primary Subject
Source
Korean Nuclear Society, Taejon (Korea, Republic of); [CDROM]; May 2000; [12 p.]; 2000 spring meeting of the KNS; Kori (Korea, Republic of); 26-27 May 2000; Available from KNS, Taejon (KR); 7 refs, 10 figs, 4 tabs
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Miscellaneous
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Conference
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[en] Iodine and cesium atoms were encapsulated in single-walled carbon nanohorns (SWCNHs). Atom encapsulation was carried out with sequential plasma aided procedures which consisted of opening SWCNH tips with an oxygen plasma, atom insertion in an iodine-mixed or cesium-mixed argon plasma, and closing the open tip in an argon plasma. Results reveal that oxidation plays a role in the tip opening procedure, and capillary forces are the driving force for the permeation of the atoms through the open tip of the SWCNHs. The open tip of the atom inserted SWCNH can be closed under the ion irradiation. It demonstrated the fabrication process of encapsulating atoms in SWCNH by using the sequential plasma assisted processes.
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(c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
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