AbstractAbstract
[en] The inhibition of corrosion of corrosion of the aluminium sheet (commercial) in solutions of sodium hydroxide was studied by weight loss methods and the variation of pH value of the corrosion solution was detected. At constant alkali concentration the inhibitor efficiency increased with increase in the concentration of the inhibitor. (When the inhibitor concentration was 0.5% and above.) But at low concentrations of the inhibitors (0.1% and below) the efficiency decreased to minus values. At 2.0% concentrations of inhibitors, the inhibitive efficiencies of the inhibitors increased in the order, p-am-inophenol (85.6%) < p-cresol < hydroquinone < phenol < p-nitrophenol < p-chlorophenol (98.6%) At constant inhibitor concentration the efficiency decreased with increase in alkali concentration. An increase in exposure period or temperature did not appear to have any marked effect on inhibitive efficiency. The variation of pH values in the solution had also a small effect. As for the effect of substituent groups, when an equal number of molecules of each of the compounds was present in the alkaline solution the efficiency of different para-compounds increased in the order: p-aminophenol (77.8%) < phenol < hydroquinone < p-chlorophenol < p-cresol < p-nitrophenol (96.1%)
Primary Subject
Source
10 refs, 5 figs, 3 tabs
Record Type
Journal Article
Journal
Journal of the Corrosion Science Society of Korea; ISSN 0253-312X; ; v. 9(4); p. 16-26
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] Hafnium oxide films deposited on thermally grown SiON film and hydrogen-terminated Si bare substrate by an atomic layer deposition technique have been investigated. Capacitance-voltage measurements show an equivalent oxide thickness of about 1.79 nm for a 4.2 nm HfO2/SiON stack capacitor and of about 1.84 nm for a 5.2 HfO2 single layer capacitor, and a permittivity of 18.1 for the HfO2 in stack capacitor and of 11.2 for HfO2 single layer capacitor. TEM showed that the interface of the stack capacitor can be stable at least 850 .deg. C
Primary Subject
Secondary Subject
Source
5 refs, 4 figs, 2 tabs
Record Type
Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884; ; v. 42(Suppl.); p. 1146-1148
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue