[en] We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO₂ thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering

[en] Logic elements endowed with memory are realized with two types of memristors: organic and inorganic ones. The organic devices are based on a polyaniline/polyethylene oxide heterostructure, while the inorganic ones are based on a Pt/Al₂O₃/Ti heterostructure. The memristors are characterized by measuring cyclic voltage–current characteristics. They are then used to make AND gates showing memory abilities, exhibiting different behaviors. In the case of the inorganic devices the OFF/ON transitions are very fast when two inputs are applied simultaneously, while they are slow, with a gradual increase of the conductivity, in the case of the organic devices. The two types of devices are suggested as logic elements for future neuromorphic computers combining memory and processing properties. (paper)