[en] The symposium of which this book is a record focused on wide ranging research and technology-based aspects of its scientific topic. They ranged from the fundamentals of ultra-fast beam-solid interactions and ion and electron beam induced materials modifications to laser chemical and transient thermal processing and the recrystallisation of silicon-on-insulator

[en] A method of producing laser annealed electronic devices is described. The technique involves irradiating semiconductor material such as silicon or germanium to produce a neutron transmuted semiconductor material and laser annealing a selected region or regions in a slice of the transmuted material to a sub-micron depth. (U.K.)

[en] Transmission electron microscopy and ⁴He ion channeling measurements were combined to investigate the physical state of implanted W in copper. For 60⁰K implantations of 2 x 10¹⁵ W cm^-2, W is found to be 100 percent substitutional and is still 90 percent substitutional for a dose of 10¹⁶ W cm^-2. Implantation of 10¹⁷ W cm^-2 produces a thin disordered surface layer of W and Cu with the W occupying no regular lattice site. On annealing to 600⁰C, W precipitates are formed with dimensions of a few hundred A and certain preferred orientations in the Cu lattice. (auth)

[en] The review surveys the new field of transient annealing and covers all timescales below those available with the conventional furnace. The work outlined includes the use of techniques which rely upon transient energy deposition in semiconductors from laser, electron beam, ion beam and other radiant sources. The many advances which have been achieved using these transient annealing methods in both fundamental and applied areas of physics are described. (author)

[en] Recently, ion implantation has been used to produce metastable alloy layers with a range of structures from crystalline substitutional solid solutions to amorphous. The technique offers the possibility of producing metastable metal layers with unique physical properties. Its application in the formation of alloys exhibiting different although complementary types of metastability is described. The metal combinations chosen (Ag-Cu and Ta-Cu) show little mutual solubility under equilibrium conditions

No abstract available

[en] It is the purpose of the present article to describe in detail the structural features of Si which has been implanted with a range of dopants (P⁺, As⁺, In⁺) and then subjected to Q-switched laser annealing. The annealed implanted layers were examined in a transmission electron microscope. The evolutionary stages in the annealing of an initially amorphous surface layer will be considered, together with the behaviour of excess implanted dopant which may be present. (U.K.)

[en] Transmission electron microscopy and ⁴He-ion channelling measurements have been combined to investigate the physical state of implanted W in copper. For 60K implantations of 2 x 10¹⁵W cm^-2, W is found to be 100% subtitutional and is still 90% substitutional for a dose of 10¹⁶W cm^-2. Implantation of 10¹⁷W cm^-2 produces a thin disordered surface layer of W and Cu with the W occupying no regular lattice site. Upon annealing to 600⁰C, W precipitates are formed with dimensions of a few hundred angstroms and certain preferred orientations in the Cu lattice. (author)

[en] Superconducting Nb-Ge films have been prepared by getter sputtering over a range of conditions which yielded superconducting onset temperatures of up to 22 K. The structure of the films has been studied by transmission electron microscopy and diffraction. Films with the highest transition temperatures are composed substantially of A15 Nb₃Ge grains but, when a second phase occurs, it is apparently D8sub(m)Nb₅Ge₃ often in the form of lamellar structures. The latter may form by a martensitic transformation, and possible effects of the second phase upon film electrical properties are examined. Films deposited at below the optimum growth temperature contain a proportion of non-crystalline material and, for a sufficiently low growth temperature, they can be completely non-crystalline with a transition temperature of <4.2 K. The annealing behaviour of radiation-damaged Nb-Ge has also been studied. The way in which the basic characteristics of the A15 lattice and its point defect content may control the electrical properties of the material are discussed. (author)

No abstract available