[en] I will present the results of the commissioning of the CMS Forward Pixel system, that has been carried out at CERN before the final installation in CMS. The commissioning was meant to check every mechanical and electrical aspect of the system and to verify that the actual performance of the detector, once assembled and with the same power and readout systems that will be used in the final experiment, was still of the same high quality as during the production phase. The Forward Pixel system presents a negligible number of dead channels, lower than 0.04%, and an average noise lower than 120 electrons.

[en] The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new highly radiation tolerant silicon pixel sensors, capable of withstanding fluences up to $2.3\times <!--\; ??\; -->{10}^{16}{\mathrm{n}}_{\mathrm{e}\mathrm{q}}/\mathrm{c}{\mathrm{m}}^2$ (1 MeV equivalent neutrons). In this paper results obtained in beam test experiments with 3D and planar pixel sensors interconnected with the RD53A readout chip are reported. RD53A is the first prototype in 65 nm technology issued by the RD53 collaboration for the future readout chip to be used in the upgraded pixel detectors. The interconnected modules have been tested in an electron beam at DESY, before and after irradiation, which was performed at the CERN IRRAD facility for the 3D sensors or at the KIT Irradiation Center for the planar sensors, up to an equivalent fluence of $1\times <!--\; ??\; -->{10}^{16}{\mathrm{n}}_{\mathrm{e}\mathrm{q}}/\mathrm{c}{\mathrm{m}}^2$. The sensors were made by FBK foundry in Trento, Italy, and their development was done in collaboration with INFN (Istituto Nazionale di Fisica Nucleare, Italy). The analysis of the collected data shows hit detection efficiencies around 99% measured after irradiation. All results are obtained in the framework of the CMS R&D activities.

[en] The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented

[en] We irradiated two diamond detectors with 62 MeV energy proton beam up to an integrated fluence of about 2×10¹⁵ protons/cm² at INFN-LNS in Catania (Italy). The detectors were made of two high purity poly-crystal diamond sensors. The electric contacts of the two diamond sensors were from different sources and made with different techniques: a proprietary DLC/Pt/Au electric contact and our own novel UV Laser technique. We collected 120 GeV and 62 MeV proton beam data, before and after irradiation, respectively, to extract the radiation damage constant of one poly-crystal diamond sensor by using single crystal diamond detector response as reference

[en] We present a comparative characterization of the performance of a single-crystal and a polycrystalline diamond pixel-detector employing the standard CMS pixel readout chips. Measurements were carried out at the Fermilab Test Beam Facility, FTBF, using protons of momentum 120 GeV/c tracked by a high-resolution pixel telescope. Particular attention was directed to the study of the charge-collection, the charge-sharing among adjacent pixels and the achievable position resolution. The performance of the single-crystal detector was excellent and comparable to the best available silicon pixel-detectors. The measured average detection-efficiency was near unity, ε = 0.99860±0.00006, and the position-resolution for shared hits was about 6 μm. On the other hand, the performance of the polycrystalline detector was hampered by its lower charge collection distance and the readout chip threshold. A new readout chip, capable of operating at much lower threshold (around 1 ke⁻), would be required to fully exploit the potential performance of the polycrystalline diamond pixel-detector.

[en] Results obtained with 3D columnar pixel sensors bump-bonded to the RD53A prototype readout chip are reported. The interconnected modules have been tested in a hadron beam before and after irradiation to a fluence of about 1×10¹⁶ neq cm⁻² (1 MeV equivalent neutrons). All presented results are part of the CMS R and D activities in view of the pixel detector upgrade for the High Luminosity phase of the LHC at CERN (HL-LHC) . A preliminary analysis of the collected data shows hit detection efficiencies around 97% measured after proton irradiation.

[en] Due to the large expected instantaneous luminosity, the future HL-LHC upgrade sets strong requirements on the radiation hardness of the CMS detector Inner Tracker. Sensors based on 3D pixel technology, with its superior radiation tolerance, comply with these extreme conditions. A full study and characterization of pixelated 3D sensors fabricated by FBK is presented here. The sensors were bump-bonded to RD53A readout chips and measured at several CERN SPS test beams. Results on charge collection and efficiency, for both non-irradiated and irradiated up to 10${}^{16}$ n${}_{\mathrm{e}\mathrm{q}}$/cm${}^2$ samples, are presented. Two main studies are described: in the first the behaviour of the sensor is qualified as a function of irradiation, while kept under identical conditions; in the second the response is measured under typical operating conditions.