[en] To investigate the mechanism of Na⁺ uptake and accumulation Lycium barbarum L. The contents of Na⁺ and K⁺ in the roots of Lycium barbarum L. was determined using atomic absorption spectrophotometry under different salt treatments. Meanwhile, the expression levels of Na⁺/H⁺ transporter and H⁺ -ATP enzyme involved in ion transport in plasm member and tonoplast were determined by quantitative real time PCR. The results showed that the plant exhibited slow increasing in Na⁺ content in response to salt stress. However, the K⁺ content increased and then decreased, the ratio of Na⁺/K⁺ decreased and then increased. The expression abundance of LbSOS1, LbNHX1 and LbVHA-C1 in plasm membrane and tonoplast remained relatively higher but LbHA1 increased and then decreased. Long-term stress of NaCl induced the accumulation of Na⁺ but decreased K⁺ content, and the ratio of Na⁺/K⁺ increased. Meanwhile, The expression abundance of LbSOS1, LbNHX1 increased and then decreased but LbVHA-C1 and LbHA1 decreased. Significantly positive or negative correlations was found between the expression level of LbSOS1, LbNHX1, LbVHA-C1 and LbHA1 and the content of Na⁺. That indicated retaining higher ratio of K⁺/Na⁺ was one of the main ways of salt tolerance in Lycium barbarum L. under low NaCl concentration. The high express level of Na⁺/H⁺ transporter and H⁺ -ATP enzyme in plasma membrane and vacuolar membrane could excrete Na⁺ from the cytoplasm into vacuolar cells at the early stage of stress, but long-term time stress induced the lower expression of LbSOS1, LbNHX1, LbVHA-C1 and LbHA1 and the accumulation of Na⁺, which contributed to the reduction of salt tolerance of Lycium barbarum L. The results of this study laid a theoretical foundation for salt-tolerance of Lycium barbarum L. and improvement of saline-alkali soil in large area. (authors)

[en] This paper presents a preliminary result about ultra-deep etched microstructures on 〈1 0 0〉 silicon wafer based on metal assisted chemical etching (MaCE). Honeycomb hole arrays with 50 µ m width were successfully etched, as deep as 280 µ m. The porous defects on the patterned surface and the lateral etching on the sidewall were effectively suppressed by optimizing the etchant solution. The results in this paper indicate that 〈1 0 0〉 silicon can be etched vertically with smooth sidewalls by an etchant solution containing ethanol, instead of the conventional aqueous-based solution. This improved method of MaCE has potential application in large-scale Si etching as a supplementary method to the expensive and complicated dry etching method. (paper)