[en] Organic–inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y₂O₃)/OHP stacking structure in this manuscript. The potential barrier between Y₂O₃ and perovskite is relatively high (ΔE _C = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y₂O₃/OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions. (paper)

[en] 2D semiconductors have emerged as candidates for next-generation electronics. However, previously reported 2D transistors which typically employ the gate-first process to fabricate a back-gate (BG) configuration while neglecting the thorough impact on the dielectric capping layer, are severely constrained in large-scale manufacturing and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. In this study, dual-gate (DG) field-effect transistors have been realized based on wafer-scale monolayer MoS${}_2$ and the gate-last processing, which avoids the transfer process and utilizes an optimized top-gate (TG) dielectric stack, rendering it highly compatible with CMOS technology. Subsequently, the physical mechanism of TG dielectric deposition and the corresponding controllable threshold voltage (V${}_{TH}$) shift is investigated. Then the fabricated TG-devices with a large on/off ratio up to 1.7 × 10${}^9$, negligible hysteresis (≈14 mV), and favorable stability. Additionally, encapsulated TG structured photodetectors have been demonstrated which exhibit photo responsivity (R) up to 9.39 × 10${}^3$ A W${}^{-<!--\; ???\; -->1}$ and detectivity (D*) ≈2.13 × 10${}^{13}$ Jones. The result paves the way for future CMOS-compatible integration of 2D semiconductors for complex multifunctional IC applications. (© 2024 Wiley‐VCH GmbH)