[en] Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry

[en] In this study, the authors studied simultaneous and intermittent electron irradiation effects on bubble growth in a simple sodium borosilicate glass during Xe ion implantation at 200 C. Simultaneous electron irradiation increases the average bubble size in the glass. This enhanced diffusion is also shown by the migration of Xe from bubbles into the matrix when the sample is irradiated by an electron beam after the Xe implantation

[en] Insitu transmission electron microscopy has been used to observe sputtered Au during Xe ion irradiation in transmission geometry. The sputtered Au was collected on an electron transparent carbon foil. Nanoparticles were observed on the collector foil after they were ejected by single ion impacts. The ejection is from the melt zone formed during the thermal spike phase of a displacement cascade produced near the surface by a single ion impact. Such single ion impacts are also capable of producing craters. Ejected nanoparticles can make a significant contribution to sputtering

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[en] Thin film samples of a simple embedded nanocluster system consisting of solid Xe precipitates in Al have been subjected to 1 MeV electron irradiation in a high-voltage electron microscope. High-resolution images have been recorded on videotape in order to monitor the changes to the system resulting from the passage of electrons through the film. Inspection of the video recordings (in some cases frame-by-frame) reveals that complex, rapid processes occur under the electron beam. These include, movement of small clusters, coalescence of neighboring clusters, shape changes, the apparent melting and resolidification of the Xe, and the creation and annealing of extended defects within the Xe lattice. A tentative interpretation of some of the observations is presented in terms of the electron-induced displacement processes at the surface of the clusters

[en] The probable formation mechanism of He bubble superlattices relies on long range anisotropic diffusion of self-interstitial atoms (SIAs). Here we study He ion irradiation of pure Ni and two equiatomic concentrated solid-solution alloys (CSAs) of FeNi and FeCrNiCo. It is expected from the significantly reduced diffusion of SIAs in CSAs, including high entropy alloys (HEAs), that long range anisotropic SIA migration cannot be active. We report the formation of a He bubble lattice in pure Ni, and for the first time in FeNi and FeCrNiCo systems under 30 keV He ion irradiation at room temperature. The ion dose and flux required to form a bubble superlattice increase with chemical complexity. Comparing to Ni, SIA clusters change directions more frequently due to anisotropic elementally-biased diffusion from the higher degree of chemical non-homogeneity in CSAs. Nevertheless, anisotropic 1-D diffusion of interstitial defects is possible in these complex alloys over incrementally longer time scales and irradiation doses. The sluggish diffusion, characteristic in CSAs, leads to smaller superlattice parameters and smaller bubble diameters. The chemical biased SIA diffusion and its effects on He evolution revealed here have important implications on understanding and improving radiation tolerance over a wide range of extreme conditions.

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No abstract available

[en] Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface