[en] An ion implanter apparatus is described with provision for neutralizing the space charge potential of the ionic beam with a closed loop feedback system responding to the electrical charges that tend to accumulate on a target specimen. Neutralization is provided by a controllable electron source surrounding the beam. Flow of electrons to a plate radially outward of the electron source is used to derive a signal proportional to the beam ion current when the space charge potential of the beam is neutralized. The beam current signal can be used (1) to provide a read-out display for the operator; (2) to control the magnitude of the ion beam; (3) to be integrated to determine the total positive charge that enters the faraday cage of the implanter for use to control the ion beam shutter; or (4) to effect relative movement of the specimen and the beam

[en] A magnet has been designed for space-charge neutralization studies on the Injector Test Experiment at the Chalk River Nuclear Laboratories. Augmented by suitable collectors, the magnet could also be used for pilot-scale isotope separations. The present report documents the design of this particular magnet and illustrates the process of designing beam transport magnets in general

[en] An improved playback stylus for use with a capacitive high information disc wherein the playback stylus comprises a diamond dielectric support element having a bottom surface which contacts the disc and a conductive layer adjacent to the bottom surface. The improvement comprises forming the conductive layer as an ion implanted layer in the support element. The prepared ion is boron. (author)

[en] In one embodiment, a semiconductor device, such as an insulated-gate-field-effect-transistor (IGFET), is simultaneously radiation hardened with Al ions and its threshold voltage stabilized with halide ions, such as Cl ions, by bombarding a silicon dioxide gate insulator of the device with molecular ions of an aluminum halide, such as AlCl₂⁺ ions. In another embodiment, a surface (target) of silicon is bombarded with molecular AlCl₂⁺ ions to ion implant separate Al ions and Cl ions. An oxide layer subsequently thermally grown on the bombarded surface includes the Al ions and the Cl ions, and the oxide layer is radiation hardened and gettered

[en] Reliability is of paramount importance for industrial ion-beam systems. However, manufacturing processes often involve the operation of ion sources at elevated temperatures with corrosive and erosive feeds. Under these conditions, the durability of various components, and especially cathodes, may be reduced by physical sputtering and chemical erosion. The duoPlGatron ion source, having two chambers, is well suited to minimizing this problem. The first chamber houses the cathode and serves as an electron generator for the second PIGing, or reflex arc, chamber where most of the extracted ions are created. Consequently, the first chamber can be operated on an inert gaseous feed chosen to maximize filament lifetime, while the second chamber is fed a noxious gas or vapor that gives rise to the ion of interest. This principle has already been applied to a high-current oxygen source that was developed for the Eaton NV-200 high-energy ion implanter. The technique has also been demonstrated with the gases phosphine, arsine, and boron trifluoride as secondary feeds. The present paper reports on the operation of a modified duoPlGatron with vapor genera ed by an external oven. (author)

No abstract available

[en] A duoPIGatron augmented by magnetic cusp confinement has been equipped with a large-volume external oven. The oven has operated at temperatures as high as 1100 degree C. Beams of lithium, phosphorus, calcium, and bismuth have been extracted with a multiple-aperture triode column at voltages of up to 40 kV. Mass normalized current densities of as much as 250 mA cm^-2 of singly charged ions have been obtained