[en] To describe the damage process of polymer in the energetic heavy ion tracks by thermal spike model, polycarbonate (PC, Makrofol KG) foil stacks were irradiated with various swift heavy ions (1.158 GeV Fe⁵⁶, 1.755 GeV Xe¹³⁶ and 2.636 GeV U²³⁸) in a very wide electronic stopping power range (from 1.9 to 17.1 keV/nm) and fluence range from 1 x 10¹⁰ to 3 x 10¹² ions/cm². The amorphous processes and chemical degradation in the irradiated PC were studied by X-ray diffraction and Fourier transform infrared spectroscopy measurements. By applying the saturated track model, the mean damage radii of tracks of the amorphous and alkyne formation process were obtained for Fe, Xe and U ion irradiation, respectively. The results were validated by the thermal spike model. The analysis of the irradiated PC films shows that the predictions of the thermal spike model of Szenes are basically in quantitative agreement with the experimental results

[en] SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120 keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum (FTIR) and photoluminescence (PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions

[en] The interaction of swift heavy ion with matter has become an important and attractive field. Swift heavy ions are very efficient to induce phase transformations in a cylinder of some nanometers. Latent tracks have observed in all kinds of material, metals,semiconductors and insulators. Tracks induced by energetic ions in the electronic stopping regime can be used for a large varieties of different applications in many scientific and technological fields. Present status of research on track formation and its application will be reviewed. (authors)

[en] In the interaction process of a swift heavy ion (SHI) and polymer, a latent track with radius of several nanometers appears near the ion trajectory due to the dense ionization and excitation. To describe the role of electronic energy loss (dE/dX)_e, multi-layer stacks (with different dE/dX) of polyimide (PI) films were irradiated by different SHIs (1.158 GeV Fe⁵⁶ and 1.755 GeV Xe¹³⁶) under vacuum at room temperature. Chemical changes of modified PI films were studied by Fourier Transform Infrared (FTIR) spectroscopy. The main feature of SHI irradiation is the degradation of the functional group and creation of alkyne. The chain disruption rate of PI was investigated in the fluence range from 1 x 10¹¹ to 6 x 10¹² ions/cm² and a wider energy stopping power range (2.2 to 5.2 keV/nm for Fe⁵⁶ ions and 8.6 to 11.3 keV/nm for Xe¹³⁶ ions). Alkyne formation was observed over the electronic energy loss range of interest. Assuming the saturated track model (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were deduced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal spike model and the threshold electronic energy loss of track formation S_et in PI was deduced. The analysis of the irradiated PI films shows that the predictions of the thermal spike model are in qualitative agreement with the curve shape of experimental results. (authors)

[en] Semicrystalline polyethylene terephthalate (PET) film stacks were irradiated with 22 MeV/u Fe ions at room temperature under vacuum. Ion beam induced microscopic structural modifications and amorphous transformation were investigated by means of Fourier transform infrared spectroscopy (FTIR), ultraviolet visible absorption spectroscopy (UV/Vis) and X-ray diffractometer (XRD). It was found that the material underwent serious chemical degradation through bond breaking and formation of new bonds. Crystalline structure of the material was gradually destroyed with extending the amorphous region. Both the chemical degradation and amorphous transformation increase in amount with increase of ion fluence and electronic energy loss. But the total changes induced by the irradiation depend merely on the absorbed dose. (author)

No abstract available

[en] The irradiation experiments of thin C₆₀ film stacks were performed by S, Fe, Xe, and U ions with energy of GeV delivered by HIRFL at Lanzhou in China,and Unilac in Germany respectively, and 120keV H ions delivered by ion Implantor at Institute of Modem Physics, Chinese Academy of Sciences. The structural stability of C₆₀ films under the irradiation by swift heavy ions or high density electronic excitation effects were analyzed by means of FTIR, XRD, XPS and Raman scattering spectroscopies. The analysis results indicated that the irradiations induced the polymerization and destruction of C₆₀ molecules, some components of high-temperature-high-pressure phase of the polymerized C₆₀ appeared in the irradiated C₆₀ films and finally amorphous transformation of C₆₀ films took place. The electronic energy transfer dominates the damage process of C₆₀ films. The partial recovery of the damage in irradiated C₆₀ films at certain electronic energy loss is attributed to an annealing effect of high density electronic excitation. (authors)

[en] Integrating nanowires with nonuniform diameter and random spatial distribution into an array can afford unconventional and additional means for modulating optical response. However, experimental realization of such a nanowire array is quite challenging. In this work, we propose a new fabrication strategy which takes advantage of ion track technology, via sequential swift heavy ion irradiation and ion track etching. Based on this strategy, we unprecedentedly realize nanowire arrays, using gold as an example, with gradient and programmable diameters in a controlled manner. We further demonstrate that such nanowire arrays can support broadband, tunable, and enhanced plasmonic responses. We believe that our new type of nanowire arrays will find great potential in applications such as light management and optoelectronic devices. (special topic)

No abstract available

No abstract available