[en] For a quantitative analysis of the non-Abelian three-gluon vertex a continuous parameterisation of possible deviations from QCD is highly desirable. An almost unique extension of the three-gluon vertex is provided by the dimension-6 operator Tr(F_μ^νF_ν^ρF_ρ^μ). The effects of this interaction term on various observables in e⁺e^-→γ, Z→4 jet production are studied in detail. Present e⁺e^- data are expected to give rather weak bounds on such anomalous contributions to the triple gluon vertex. (orig.)

[en] We consider the real emission QCD correction to heavy Higgs boson production via weak boson fusion in high energy pp collisions. The O(α_s) corrections are determined for the complete electroweak qq→qqW⁺W^- process. The presence of a third parton in the final state affects the formation of rapidity gaps only slightly. In particular, soft emission into the gap region is severely suppressed. Also, we investigate how the additional hard emission affects forward-jet-tagging and central-jet-vetoing efficiencies in the search for H→W⁺W^-→l⁺νl^-bar ν decays

[en] Deviations from the QCD prediction for the three-gluon vertex can be parameterised in terms of the dimension-6 operator Tr(G_μ^νG_ν^ρG_ρ^μ) in a guage invariant way. Tree level unitarity considerations for the gg→gg elastic scattering process severely constrain the signal for an anomalous three-gluon vertex in dijet production at hadron colliders. This leaves four-jet events at e⁺e^- colliders as a very competitive way to study the three-gluon vertex. (orig.)

[en] Rapidity gaps may provide an adequate signature for electroweak processes at supercolliders, including the production of the Higgs particle. We show how this important issue can be studied in the dijet final states of operating proton-antiproton colliders and present quantitative predictions. (orig.)

[en] Based on the evaluation of lattice parameter maps in aberration corrected high resolution transmission electron microscopy images, we propose a simple method that allows quantifying the composition and disorder of a semiconductor alloy at the unit cell scale with high accuracy. This is realized by considering, next to the out-of-plane, also the in-plane lattice parameter component allowing to separate the chemical composition from the strain field. Considering only the out-of-plane lattice parameter component not only yields large deviations from the true local alloy content but also carries the risk of identifying false ordering phenomena like formations of chains or platelets. Our method is demonstrated on image simulations of relaxed supercells, as well as on experimental images of an In_0.20Ga_0.80N quantum well. Principally, our approach is applicable to all epitaxially strained compounds in the form of quantum wells, free standing islands, quantum dots, or wires