[en] A possibility of intense accelerated electron beam extraction from vacuum into atmosphere through the window representing a flat thin-wall channel in which liquid flow removing absorbed energy moves perpendicularly to the direction of the extracted beam is considered. Correlation associating the limiting value of electron current density with parameters of the window is obtained. It is shown that utilization of the window representing a thin-wall plane channel with water permits to increase density of the extracted electron beam up to dozens mA per cm², that two orders higher than that obtained when using the window as air-cooled sinqle foil

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[en] In this review processes related to the amorphization of an irradiated semiconductor layer have been considered. Data on the investigation into the homogeneity of amorphous layers of germanium and silicon in a wide range of the irradiation doses (10¹⁵ cm^-2 - 3x1U¹⁷ cm^-2) with Ne⁺, P⁺, B⁺, As⁺, Ar⁺, H₂⁺ ions of 40-50 keV are presented. Thermal and radiation structure changes in the semiconductor layers bombarded with the ions have been discussed

[en] A new paramagnetic center, called H12, in silicon irradiated by high neutron doses is detected and investigated by the ESR method. The H12 center density observed is approximately 10¹⁶ cm^-3 at radiation dose approximately 10¹⁹ cm^-2 and it does not depend on the type of alloying impurity and the way of crystal growing. The spectral angular dependence is described by the spin Hamiltonian with electron spin s=1/2 and g-tensor characterized by symmetry C₁(or C_i). The hyperfine structure (HFS) of the H12 spectrum contains three groups of lines and corresponds to one, two and two-three points in zero, first and second defect shells correspondingly. High-temperature (T=100-200 deg C) uniaxial compression leads to partial reorientation of the defect, which is characterized by the E_a ≅ 1 eV activation energy and the ν₀ approximately 10 ¹³ c^-1 frequency factor. The H12 defect model - the complex of three interstitial atoms (I₃⁺), is suggested on the basis of the structure of the defect nearest surrounding, its symmetry, as well as the closeness of HFS parameters and g-tensors of H12 and P6 spectra (the complex of two interstitial atoms) and with regard to the character and the value of spectrum response to the uniaxial compression

[en] Short communication

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[en] Taking into account the connection between spin ensity and gap state density in amorphous silicon (a-Si), the EPR data are envisaged aimed at controlling the density of localized states with different radiation and heat treatment of Si amorphized by ion implantation. Results are considered on thermal annealing of ion-implanted Si layers, the interaction between hydrogen and dangling bonds which are responsible for localized states in a-Si, as well as the interaction between transition elements (Cr, Mn, Cu, and Zn) and dangling bonds. The data on combined irradiation are considered too: firstly the group III or V ion implantation is performed to Si (or a-Si) and then the electron beam irradiation conducted. Some ways of doping a-Si are discussed. One of the ways consists in the group III or V ion implantation to high doses (> 10¹⁶ cm^-2). The other way is the combined irradiation of a-Si. (author)

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