[en] Magnetic multilayers of the form Co/Ag/CoO, grown on Si₃N₄ substrates, with seed layers of Ag or Ta of various thicknesses were studied. There is a dramatic difference between the exchange fields and between the coercive fields for the differing seed layers such that, for a Ag seed layer, the loop can be fully shifted to one side of zero field whereas, with a Ta seed layer, this behavior is not observed. One important difference in the seed layers is the layer roughness; the Ag seed layer is as much as six times rougher than the Ta layer, as determined by atomic force microscopy

[en] The properties of Co/CoO_x exchange-coupled spin valves are explored at temperatures to 5 K. The spin valve structure is: 100 A CoO_x/30 A Co/30 A Cu/10 A Co/50 A NiFe/50 A Ti. Our discovery is the considerable differences between the properties of the spin valves for which the CoO_x layer is prepared in different O₂ concentrations

[en] We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

[en] The thermoelectric power of pure NbSe₃ has been measured as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. It was found that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities than the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage. (author)