[en] In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K⁻¹). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity

[en] The Ni/p-InP Schottky diodes (SDs) have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 °C for 1 min in N₂ atmosphere. Then, the current–voltage characteristics of the annealed and non-annealed (as-deposited) SDs have been measured in the measurement temperature range of 60–400 K with steps of 20 K under dark conditions. After 700 °C annealing, an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height (BH) value approximately has remained unchanged in the measurement temperature range of 200–400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution (GD) of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of 54.21 A/cm²K² for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K²cm² for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700 °C for 1 min in N₂ atmosphere. (paper)

[en] Research highlights: → The diffraction profile of the PbS thin film from XRD experiments has been extracted. → An optical energy band gap value of the PbS film was obtained from the optical absorption spectra. → The Au/PbS/n-6H-SiC Schottky diodes have been formed. → The Schottky barrier height increase has been succeeded by the PbS interlayer. - Abstract: To realize Schottky barrier height (SBH) modification in the Au/n-6H-SiC Schottky diodes, lead sulfide (PbS) thin films were grown on n-6H-SiC by electrodeposition method. At first, XRD experiments were performed to investigate the crystal structure of the PbS film electrodeposited on n-6H-SiC. It has been deduced from the diffraction profile that the PbS thin film has a crystal structure more strongly oriented along the [2 0 0] direction. An optical energy band gap value of 1.42 eV for the PbS film was obtained from its optical absorption spectra. Then, we have prepared Au/PbS/n-6H-SiC Schottky barrier diodes (SBDs) with interface layer and reference Au/n-6H-SiC/Ni SBDs. The SBH enhancement has been succeeded by the PbS interlayer, influencing the space charge region of the SiC. The SBH values of 1.03 and 0.97 eV for the samples with and without the interfacial PbS layer were obtained from the forward bias current-voltage (I-V) characteristics. The SBH increase in the Au/PbS/n-6H-SiC SBD with the interfacial PbS layer has been attributed to the fact that the interface states contain a net negative interface charge in metal/n-type semiconductor contact due to the presence of the interfacial PbS layer.

[en] High-k Al_2O_3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al_2O_3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C–V) and current-voltage (I–V) properties at 300 K. The saturation current of the forward bias and reverse bias I–V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I–V characteristics. The C–V characteristics of the structure have shown almost no hysteresis from +3 V to −10 V with frequency as a parameter. The reverse bias C–V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz. (paper)

[en] The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of annealing temperature on the characteristics of the device. DC Magnetron sputtering technique has been used for Co metallic contact. The samples have been annealed for three minutes at 400 °C and 600 °C. XRD analyzes of the devices subjected to thermal annealing process have been investigated. Surface images have been taken with atomic force microscopy (AFM) in order to examine the morphology of the surface of the metal layer before and after the annealing the sample. The current–voltage (I–V) measurements taken at room temperature have shown that the ideality factor and series resistance decrease with the increasing annealing temperature. The ideality factor was found to be 1.02 for sample annealed at 400 °C. Before and after annealing, depending on the temperature measurement, the capacitance–frequency (C–f), and conductance–frequency (G–f) have been measured, and graphs have been plotted