[en] The arco therapy of intensity-modulated (VMAT) is a relatively new treatment technique. VMAT treatment they can provide more efficient and accurate than previous techniques, using one or more arcs. The objective of the work will be the detector acceptance of the ArcCHECK (Nuclear Sun, Melboume, FL) for use as a tool of verification treatment VMAT. (Author)

[en] During the process of commissioned and implementation of IMRT module we ask which would be the experimental set-up for the evaluation of the two-dimensional dose distributions using an array of detectors, taking into account the different possibilities offered by the materials available in the service, which allow as to provide three different configurations. The objective of the study is to determine which of the three offered us better results for checks of the two-dimensional distributions of dose in IMRT treatments, taking into account the workload involved in each method. (Author)

[en] Accuros XB 1 is a new algorithm introduced by Varian Medical Systems in your Eclipse Planner for external radiotherapy. It is based on the solution of the linear Boltzmann transport equation2. It is necessary to carry out different tests in order to determine its accuracy. This paper examines the variation in absolute doses in presence of inhomogeneities and the results are compared with the results obtained for the Accuros XB and AAA algorithms. (Author)

[en] The TG119 is a simple and clear framework to verify the implementation of IMRT technique in a radiotherapy service. Verifications of this document recommended tests conducted with the three dosimetric methods listed above, allow to affirm that our Center is within the margins of tolerance considered suitable in the TG119 for the clinical implementation of IMRT. (Author)

[en] Today it is essential to use X-ray diagnosis in health, so it is essential that professionals have a strong background in all aspects of radiological images dependent. It is also necessary to understand the dependence between dose and image quality and thus introduce the concept of optimization in the performance of radiologic studies, from a simple test to a complex, establishing a dependency between patient dose and the aim of the study to be performed.

[en] The current success of the continuous cellular automata for the simulation of anisotropic wet chemical etching of silicon in microengineering applications is based on a relatively fast, approximate, constant time stepping implementation (CTS), whose accuracy against the exact algorithm—a computationally slow, variable time stepping implementation (VTS)—has not been previously analyzed in detail. In this study we show that the CTS implementation can generate moderately wrong etch rates and overall etching fronts, thus justifying the presentation of a novel, exact reformulation of the VTS implementation based on a new state variable, referred to as the predicted removal time (PRT), and the use of a self-balanced binary search tree that enables storage and efficient access to the PRT values in each time step in order to quickly remove the corresponding surface atom/s. The proposed PRT method reduces the simulation cost of the exact implementation from O(N^5/3) to O(N^3/2 log N) without introducing any model simplifications. This enables more precise simulations (only limited by numerical precision errors) with affordable computational times that are similar to the less precise CTS implementation and even faster for low reactivity systems.

[en] Anisotropic wet chemical etching of quartz is a bulk micromachining process for the fabrication of micro-electro-mechanical systems (MEMS), such as resonators and temperature sensors. Despite the success of the continuous cellular automaton for the simulation of wet etching of silicon, the simulation of the same process for quartz has received little attention—especially from an atomistic perspective—resulting in a lack of accurate modeling tools. This paper analyzes the crystallographic structure of the main surface orientations of quartz and proposes a novel classification of the surface atoms as well as an evolutionary algorithm to determine suitable values for the corresponding atomistic removal rates. Not only does the presented evolutionary continuous cellular automaton reproduce the correct macroscopic etch rate distribution for quartz hemispheres, but it is also capable of performing fast and accurate 3D simulations of MEMS structures. This is shown by several comparisons between simulated and experimental results and, in particular, by a detailed, quantitative comparison for an extensive collection of trench profiles. (paper)

[en] PESIC is an integrated front-end for multianode photomultiplier based nuclear imaging devices. Its architecture has been designed to improve position sensitive detectors behavior by equalizing its response over its whole area. Its preamplying stage introduces two main benefits: digitally programmable gain adjustment for every photomultiplier output, and isolation from other front-end electronics by means of current buffers. This last feature allows to use different types of photomultipliers and optimizes front-end deadtime, reducing impact position dependent output delay. PESIC also includes an indirect measurement of the depth of interaction of the gamma ray inside the scintillator crystal, based on the width of its light distribution. Test measurements have been carried out in an experimental dual detector PET setup in order to quantify improvements obtained from integrated front-end calibration capabilities.

[en] An evolutionary algorithm is presented for the automated calibration of the continuous cellular automaton for the simulation of isotropic and anisotropic wet chemical etching of silicon in as many as 31 widely different and technologically relevant etchants, including KOH, KOH+IPA, TMAH and TMAH+Triton, in various concentrations and temperatures. Based on state-of-the-art evolutionary operators, we implement a robust algorithm for the simultaneous optimization of roughly 150 microscopic removal rates based on the minimization of a cost function with four quantitative error measures, including (i) the error between simulated and experimental macroscopic etch rates for numerous surface orientations all over the unit sphere, (ii) the error due to underetching asymmetries and floor corrugation features observed in simulated silicon samples masked using a circular pattern, (iii) the error associated with departures from a step-flow-based hierarchy in the values of the microscopic removal rates, and (iv) the error associated with deviations from a step-flow-based clustering of the microscopic removal rates. For the first time, we present the calibration and successful simulation of two technologically relevant CMOS compatible etchants, namely TMAH and, especially, TMAH+Triton, providing several comparisons between simulated and experimental MEMS structures based on multi-step etching in these etchants

[en] We combine experiments and simulations to study the acceleration of anisotropic etching of crystalline silicon at the mask-substrate interface, as a function of the coordination number of the substrate atoms located at the junction between obtuse-angled {1 1 1} facets and the mask layer. Atomistic simulations based on the use of the continuous cellular automaton (CCA) conclude that the interface atoms react faster with the etchant, thus initiating a step flow process that results in increased etch rates for the obtuse facets. By generating a wide range of complex cavities on high-index silicon wafers with a single-side, single-step etching, the comparison of the experimental and simulated results strongly indicates that the CCA method is suitable for accurately describing not only the development of micron-scaled structures but also, for the first time, the formation of submicron shapes. The study also describes the acceleration of obtuse facets formed through double-side etching, obtaining results in good agreement with previous experiments. (paper)