[en] An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.

[en] Scanning electron microscopy, spectroscopic ellipsometry, and current-voltage and current-temperature measurements were employed to characterize nanowhisker structures grown by molecular-beam epitaxy on Si(111) substrates. Small clusters of gold deposited on the Si surface were used as the seeds for nanowhisker growth. The diameter of grown nanowhiskers and their length ranged from 70 to 200 nm and from 580 to 890 nm, respectively. The whiskers were found to inherit the (111) orientation of the Si substrate. By means of spectroscopic ellipsometry in the range 1.5-4.77 eV, lateral optical inhomogeneity of the nanowhisker layer was revealed, with optical properties of the layer substantially differing from those of single-crystal Si. Electrical measurements point to the presence of a Schottky barrier with height 0.70 eV in the structure and to the presence of electrically active centers non-uniformly distributed over the nanowhisker length

[en] The results of numerical simulation and study of lasing characteristics of semiconductor verticalcavity surface-emitting lasers based on Al_xGa_1-xAs alloys are presented. Lasers exhibit stable single-mode lasing at a wavelength of 795 nm at low operating currents ∼1.5 mA and an output power of 350 μW, which offers prospects of their applications in next-generation chip-scale atomic clocks

[en] A semiconductor Bragg microcavity structure for single photon emitters is designed and implemented. The design provides the efficient current pumping of selectively positioned InAs quantum dots within a micrometer-size aperture, high external quantum yield, and low divergence of the emitted radiation

[en] The electronic structure of binary titanate La₂Ti₂O₇ has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La₂Ti₂O₇ are determined as α_Ti = 872.4 and α_O = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences Δ_Ti = (BE O 1s - BE Ti 2p_3/2) = 71.6 eV and Δ_La = (BE La 3d_5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

[en] High-quality BiTeCl microcrystals are grown by the physical vapor transport (PVT) method without using a foreign transport agent. The plate-like microcrystals with a developed (0001) surface are up to ∼500 μm in diameter. The grown crystal phase composition was identified by the x-ray single crystal structure analysis in space group P6₃ mc: a = 4.2475(6) Å, c = 12.409(2) Ǻ, Z = 2 (R = 0.0343). The BiTeCl microcrystal phase purity was verified by Raman microspectrometry under excitation at λ = 632.8 and 532.1 nm. (paper)