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[en] The physical processes are considered which lead to amorphization of single-crystal semiconductors during ion bombardment. A general review of experimental facts and ideas concerning processes of mono-crystal structure recovery during irradiation (the radiation annealing, the athermal stimulated crystallization of amorphized layer during bombardment of semiconductors with doping impurity ions) is carried out. (author)

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[en] The effect of irradiation temperature for high-energy electrons on defect formation in a near-to-surface silicon layer of Si-SiO₂ structures is studied. The structures are prepared by KEhF-7.5 silicon oxidation in dry oxygen, and they are irradiated with electrons at the 1x10¹⁴ cm^-2 dose in the 20-500 deg C temperature range. The donor concentration in the near-to-surface silicon layer is determined according to the minimum capacity of the high-frequency C-V characteristics of the MOS structures. Irradiation at 20 deg C causes a donor concentration growth in the near-to-surface silicon layer, and at 500 deg C - its decrease in comparison with the value for the initial structure. On the basis of the experimental data the mechanism of the donor concentration veriation with the irradiation temperature, according to which interstitial silicon atoms, generated during irradiation cause formation of defect complexes having donor properties, while increasing temperature their reconstruction proceeds in such a way that the role of complexes with donor properties decreases

[en] In the present work the linewidth H(x) variations of the ESR signals of conduction electrons have been investigated with a successive layer removal of the ion-implanted silicon. Doping impuity implantations have been carried out at both room and high temperature followed by annealing at 700 to 1150⁰C. The relationship of the observed H(x) dependence to the distribution of lattice imperfections has been found and defect profiles calculated. The lattice imperfection distributions have one or two maxima dependent upon irradiation conditions. The first maximum is near the projected range of the doping impurity ions and the second one is at the surface. The analysis of results obtained shows that the first maximum is related to defects which involve non-substitutional phosphorus atoms; the surface layer is thought to arise from interstitial defects. (author)

[en] The variations of both the linewidth ΔH[G] of the conduction electron spin resonance (CESR) and the conduction electron density N[cm^-2] in the ion implanted silicon layers during annealing at 300⁰ to 1000⁰C are presented. Defects responsible for CESR line broadening near the surface or near the average projected range of phosphorus ions are shown to have a similar nature. The results obtained provide direct evidence that the defects are clusters involving a few interstitial phosphorus atoms. (author)

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[en] Defects appearing either after boron ion implantation and annealing at 760 ⁰C or after irradiation with high-energy electrons in silicon specimens previously doped with boron, phosphorus, or arsenic, are studied. It is shown that the density and type of defects (rod-like defects or dislocation loops) is determined by the concentration and type of doping atoms, independent of the number of 'primary' dislocations formed in the course of preliminary doping. The efficiency of the interaction of interstitial atoms with 'primary' dislocations is higher at reducing the concentration of the doping impurity. (author)

No abstract available